Layered chip package and method of manufacturing same

ABSTRACT

A layered chip package includes a main body and wiring. The main body includes a main part including a plurality of stacked layer portions, and a plurality of terminals disposed on the top and bottom surfaces of the main part. The wiring includes a plurality of lines electrically connected to the plurality of terminals. The plurality of lines include a plurality of common lines and a plurality of layer-dependent lines. Each of the plurality of layer portions includes: a plurality of common electrodes electrically connected to the plurality of common lines; a plurality of non-contact electrodes that are electrically connected to the layer-dependent lines and are not in contact with the semiconductor chip in the layer portion; and a selective connection electrode selectively electrically connected to only the layer-dependent line that the layer portion uses among the plurality of layer-dependent lines. The layer-dependent lines are greater than the common lines in maximum width.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a layered chip package including a plurality of semiconductor chips stacked, and to a method of manufacturing the same.

2. Description of Related Art

In recent years, lighter weight and higher performance have been demanded of portable devices typified by cellular phones and notebook personal computers. Accordingly, there has been a need for higher integration of electronic components for use in the portable devices. With the development of image- and video-related equipment such as digital cameras and video recorders, semiconductor memories of larger capacity and higher integration have also been demanded.

As an example of highly integrated electronic components, a system-in-package (hereinafter referred to as SiP), especially an SiP utilizing a three-dimensional packaging technology for stacking a plurality of semiconductor chips, has attracting attention in recent years. In the present application, a package including a plurality of semiconductor chips (hereinafter, also simply referred to as chips) that are stacked is called a layered chip package. Since the layered chip package allows a reduction in wiring length, it provides the advantage of allowing quick circuit operation and a reduced stray capacitance of the wiring, as well as the advantage of allowing higher integration.

Major examples of the three-dimensional packaging technology for fabricating a layered chip package include a wire bonding method and a through electrode method. The wire bonding method stacks a plurality of chips on a substrate and connects a plurality of electrodes formed on each chip to external connecting terminals formed on the substrate by wire bonding. The through electrode method forms a plurality of through electrodes in each of chips to be stacked and wires the chips together by using the through electrodes.

The wire bonding method has the problem that it is difficult to reduce the distance between the electrodes so as to avoid contact between the wires, and the problem that the high resistances of the wires hamper quick circuit operation.

U.S. Pat. No. 5,953,588 discloses a method of manufacturing a layered chip package as described below. In the method, a plurality of chips cut out from a processed wafer are embedded into an embedding resin and then a plurality of leads are formed to be connected to each chip, whereby a structure called a neo-wafer is fabricated. Next, the neo-wafer is diced into a plurality of structures each called a neo-chip. Each neo-chip includes one or more chips, resin surrounding the chip(s), and a plurality of leads. The plurality of leads connected to each chip have their respective end faces exposed in a side surface of the neo-chip. Next, a plurality of types of neo-chips are laminated into a stack. In the stack, the respective end faces of the plurality of leads connected to the chips of each layer are exposed in the same side surface of the stack.

Keith D. Gann, “Neo-Stacking Technology”, HDI Magazine, December 1999, discloses fabricating a stack by the same method as that disclosed in U.S. Pat. No. 5,953,588, and forming wiring on two side surfaces of the stack.

U.S. Pat. No. 7,127,807 B2 discloses a multilayer module formed by stacking a plurality of active layers each including a flexible polymer substrate with at least one electronic element and a plurality of electrically-conductive traces formed within the substrate. U.S. Pat. No. 7,127,807 B2 further discloses a manufacturing method for the multilayer module as described below. In the manufacturing method, a module array stack is fabricated by stacking a plurality of module arrays each of which includes a plurality of multilayer modules arranged in two orthogonal directions. The module array stack is then cut into a module stack which is a stack of a plurality of multilayer modules. Next, a plurality of electrically-conductive lines are formed on the respective side surfaces of the plurality of multilayer modules included in the module stack. The module stack is then separated from each other into individual multilayer modules.

For a wafer to be cut into a plurality of chips, the yield of the chips, that is, the rate of conforming chips with respect to all chips obtained from the wafer, is 90% to 99% in many cases. Since a layered chip package includes a plurality of chips, the rate of layered chip packages in which all of the plurality of chips are conforming is lower than the yield of the chips. The larger the number of chips included in each layered chip package, the lower the rate of layered chip packages in which all of the chips are conforming.

A case will now be considered where a memory device such as a flash memory is formed using a layered chip package. For a memory device such as a flash memory, a redundancy technique of replacing a defective column of memory cells with a redundant column of memory cells is typically employed so that the memory device can normally function even when some memory cells are defective. The redundancy technique can also be employed in the case of forming a memory device using a layered chip package. This makes it possible that, even if some of memory cells included in any chip are defective, the memory device can normally function while using the chip including the defective memory cells. Suppose, however, that a chip including a control circuit and a plurality of memory cells has become defective due to, for example, a wiring failure of the control circuit, and the chip cannot function normally even by employing the redundancy technique. In such a case, the defective chip is no longer usable. While the defective chip can be replaced with a conforming one, it increases the cost for the layered chip package.

U.S. Patent Application Publication No. 2007/0165461 A1 discloses a technique of identifying one or more defective flash memory dies in a flash memory device having a plurality of flash memory dies, and disabling memory access operations to each identified die.

In the case of forming a memory device using a layered chip package, one or more defective chips included in the layered chip package may be identified and access to such defective chips may be disabled in the same way as the technique disclosed in U.S. Patent Application Publication No. 2007/0165461 A1.

Disabling access to a defective chip in a layered chip package, however, gives rise to the following two problems. A first problem is that the defective chip is electrically connected to a plurality of terminals of the layered chip package by wiring, and such a connection can possibly cause malfunction of the layered chip package.

A second problem is that, for a layered chip package that includes a predetermined number of chips and is able to implement a memory device having a desired memory capacity when all the chips included in the layered chip package are conforming, simply disabling access to any defective chip included in the layered chip package is not sufficient for implementing the memory device having the desired memory capacity.

OBJECT AND SUMMARY OF THE INVENTION

It is an object of the present invention to provide a layered chip package including a plurality of semiconductor chips stacked, a composite layered chip package, and manufacturing methods thereof that make it possible to easily implement a package capable of providing, even if it includes a malfunctioning semiconductor chip, the same functions as those for the case where no malfunctioning semiconductor chip is included.

A layered chip package of the present invention includes a main body and wiring. The main body includes a main part and a plurality of terminals. The main part has a top surface and a bottom surface, and includes a plurality of layer portions that are stacked. The plurality of terminals are disposed on at least one of the top and bottom surfaces of the main part. The wiring includes a plurality of lines that are electrically connected to the plurality of terminals and pass through all the plurality of layer portions. The plurality of lines include a plurality of common lines that have a use common to all the layer portions in the main part, and a plurality of layer-dependent lines that are used by respective different layer portions. Each of the plurality of layer portions includes: a semiconductor chip; a plurality of common electrodes electrically connected to the plurality of common lines; a plurality of non-contact electrodes that are electrically connected to the plurality of layer-dependent lines and are not in contact with the semiconductor chip; and a selective connection electrode selectively electrically connected to only the layer-dependent line that the layer portion uses among the plurality of layer-dependent lines. In at least one of the plurality of layer portions, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line.

The plurality of terminals include a plurality of first terminals formed by using the plurality of common electrodes and the plurality of non-contact electrodes of one of the plurality of layer portions that is located at one end of the main part in a direction in which the plurality of layer portions are stacked. Each of the plurality of layer-dependent lines is greater than each of the plurality of common lines in maximum width in a cross section orthogonal to the direction in which the plurality of layer portions are stacked.

In the layered chip package of the present invention, the plurality of first terminals may be disposed on the top surface of the main part. In this case, the plurality of terminals may further include a plurality of second terminals that are disposed on the bottom surface of the main part and electrically connected to the plurality of lines.

In the layered chip package of the present invention, the main body may have a top surface, a bottom surface, and four side surfaces. The plurality of lines may be disposed on at least one of the side surfaces of the main body. Alternatively, the plurality of lines may penetrate all the layer portions in the main part.

In the layered chip package of the present invention, the semiconductor chip may include a plurality of memory cells.

In the layered chip package of the present invention, the plurality of layer portions may include at least one first-type layer portion and at least one second-type layer portion. In the first-type layer portion, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line. In the second-type layer portion, the plurality of common electrodes and the selective connection electrode are not electrically connected to the semiconductor chip, and the semiconductor chip is thereby not electrically connected to the plurality of common lines and the layer-dependent line. The semiconductor chip of the first-type layer portion may be non-malfunctioning. The semiconductor chip of the second-type layer portion may be malfunctioning.

A manufacturing method of the present invention is a method of manufacturing a plurality of layered chip packages of the present invention. The manufacturing method includes the steps of: fabricating a layered substructure by stacking a plurality of substructures each of which includes a plurality of preliminary layer portions that are arrayed, each of the preliminary layer portions being intended to become one of the layer portions included in the main part, the plurality of substructures being intended to be cut later at positions of boundaries between every adjacent ones of the preliminary layer portions; and cutting the layered substructure so that the plurality of layered chip packages are produced.

In the method of manufacturing the layered chip packages of the present invention, the plurality of layer portions may include at least one first-type layer portion and at least one second-type layer portion. In the first-type layer portion, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line. In the second-type layer portion, the plurality of common electrodes and the selective connection electrode are not electrically connected to the semiconductor chip, and the semiconductor chip is thereby not electrically connected to the plurality of common lines and the layer-dependent line. The semiconductor chip of the first-type layer portion may be non-malfunctioning. The semiconductor chip of the second-type layer portion may be malfunctioning.

In the method of manufacturing the layered chip packages of the present invention, the step of fabricating the layered substructure includes, as a series of steps for forming each of the substructures, the steps of: fabricating a pre-substructure wafer including a plurality of pre-semiconductor-chip portions that are arrayed, the plurality of pre-semiconductor-chip portions being intended to become the semiconductor chips, respectively; distinguishing the plurality of pre-semiconductor-chip portions included in the pre-substructure wafer into non-malfunctioning pre-semiconductor-chip portions and malfunctioning pre-semiconductor-chip portions; and forming the plurality of common electrodes and the selective connection electrode so that the plurality of common electrodes and the selective connection electrode are electrically connected to the non-malfunctioning pre-semiconductor-chip portions while the plurality of common electrodes and the selective connection electrode are not electrically connected to the malfunctioning pre-semiconductor-chip portions, whereby the pre-substructure wafer is made into the substructure.

A composite layered chip package of the present invention includes a main package and an additional portion that are stacked on each other and electrically connected to each other. The main package includes a main body and wiring. The main body includes a main part and a plurality of terminals. The main part has a top surface and a bottom surface, and includes a plurality of layer portions that are stacked. The plurality of terminals are disposed on at least one of the top and bottom surfaces of the main part. The wiring includes a plurality of lines that are electrically connected to the plurality of terminals and pass through all the plurality of layer portions. The plurality of lines include a plurality of common lines that have a use common to all the layer portions in the main part, and a plurality of layer-dependent lines that are used by respective different layer portions. Each of the plurality of layer portions includes: a semiconductor chip; a plurality of common electrodes electrically connected to the plurality of common lines; a plurality of non-contact electrodes that are electrically connected to the plurality of layer-dependent lines and are not in contact with the semiconductor chip; and a selective connection electrode selectively electrically connected to only the layer-dependent line that the layer portion uses among the plurality of layer-dependent lines.

The plurality of terminals include a plurality of first terminals formed by using the plurality of common electrodes and the plurality of non-contact electrodes of one of the plurality of layer portions that is located at one end of the main part in a direction in which the plurality of layer portions are stacked. Each of the plurality of layer-dependent lines is greater than each of the plurality of common lines in maximum width in a cross section orthogonal to the direction in which the plurality of layer portions are stacked.

The plurality of layer portions include at least one first-type layer portion and at least one second-type layer portion. The semiconductor chip of the first-type layer portion is non-malfunctioning. In the first-type layer portion, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line. The semiconductor chip of the second-type layer portion is malfunctioning. In the second-type layer portion, the plurality of common electrodes and the selective connection electrode are not electrically connected to the semiconductor chip, and the semiconductor chip is thereby not electrically connected to the plurality of common lines and the layer-dependent line.

The additional portion includes at least one additional semiconductor chip, and additional portion wiring that defines electrical connections between the at least one additional semiconductor chip and the plurality of terminals of the main package so that the at least one additional semiconductor chip substitutes for the semiconductor chip of the at least one second-type layer portion.

In the composite layered chip package of the present invention, the semiconductor chip in each of the layer portions and the additional semiconductor chip may each include a plurality of memory cells.

A method of manufacturing the composite layered chip package of the present invention includes the steps of: fabricating the main package; fabricating the additional portion; and stacking the main package and the additional portion on each other and electrically connecting the main package and the additional portion to each other.

According to the layered chip package and the method of manufacturing the same of the present invention, it is possible to prevent malfunctioning semiconductor chips from being electrically connected to the wiring. The additional portion including a non-malfunctioning semiconductor chip can be electrically connected to the layered chip package of the invention by using the plurality of terminals of the layered chip package. This makes it possible to easily implement a package that includes a plurality of semiconductor chips stacked and that is capable of providing, even if it includes a malfunctioning semiconductor chip, the same functions as those for the case where no malfunctioning semiconductor chip is included.

According to the composite layered chip package and the method of manufacturing the same of the present invention, the main package and the additional portion can be stacked on each other and electrically connected to each other. This makes it possible to easily implement a package that includes a plurality of semiconductor chips stacked and that is capable of providing, even if it includes a malfunctioning semiconductor chip, the same functions as those for the case where no malfunctioning semiconductor chip is included.

Other and further objects, features and advantages of the present invention will appear more fully from the following description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a module according to a first embodiment of the invention.

FIG. 2 is a perspective view of a layered chip package according to the first embodiment of the invention.

FIG. 3 is a perspective view showing the layered chip package of FIG. 2 as viewed from below.

FIG. 4 is a plan view of a first layer portion of the layered chip package of FIG. 2.

FIG. 5 is a perspective view of the first layer portion shown in FIG. 4.

FIG. 6 is a perspective view of a second layer portion of the layered chip package of FIG. 2.

FIG. 7 is a perspective view of a third layer portion of the layered chip package of FIG. 2.

FIG. 8 is a perspective view of a fourth layer portion of the layered chip package of FIG. 2.

FIG. 9 is a plan view showing a plurality of second terminals and bottom wiring of the layered chip package according to the first embodiment of the invention as viewed from above.

FIG. 10 is a perspective view showing a first additional portion of the first embodiment of the invention.

FIG. 11 is a perspective view showing the additional portion of FIG. 10 as viewed from below.

FIG. 12 is a perspective view showing a second additional portion of the first embodiment of the invention.

FIG. 13 is a perspective view showing a third additional portion of the first embodiment of the invention.

FIG. 14 is a perspective view showing a fourth additional portion of the first embodiment of the invention.

FIG. 15 is a perspective view showing a first example of a composite layered chip package including one additional portion in the first embodiment of the invention.

FIG. 16 is a perspective view showing a second example of the composite layered chip package including one additional portion in the first embodiment of the invention.

FIG. 17 is a perspective view showing a third example of the composite layered chip package including one additional portion in the first embodiment of the invention.

FIG. 18 is a perspective view showing an example of the composite layered chip package including two additional portions in the first embodiment of the invention.

FIG. 19 is a block diagram showing the configuration of a memory device that uses the module according to the first embodiment of the invention.

FIG. 20 is a block diagram showing a remedy for coping with situations where the memory device shown in FIG. 19 includes a defective semiconductor chip.

FIG. 21 is a cross-sectional view showing an example of a memory cell included in the semiconductor chip.

FIG. 22 is a plan view showing a pre-substructure wafer fabricated in a step of a method of manufacturing the module according to the first embodiment of the invention.

FIG. 23 is a magnified plan view of a part of the pre-substructure wafer shown in FIG. 22.

FIG. 24 shows a cross section taken along line 24-24 of FIG. 23.

FIG. 25 is a plan view showing a step that follows the step shown in FIG. 23.

FIG. 26 shows a cross section taken along line 26-26 of FIG. 25.

FIG. 27 is a cross-sectional view showing a step that follows the step shown in FIG. 26.

FIG. 28 is a cross-sectional view showing a step that follows the step shown in FIG. 27.

FIG. 29 is a cross-sectional view showing a step that follows the step shown in FIG. 28.

FIG. 30 is a plan view showing the step of FIG. 29.

FIG. 31 is a cross-sectional view showing a step that follows the step shown in FIG. 29.

FIG. 32 is a cross-sectional view showing a step that follows the step shown in FIG. 31.

FIG. 33 is a cross-sectional view showing a step that follows the step shown in FIG. 32.

FIG. 34 is a cross-sectional view showing a step that follows the step shown in FIG. 33.

FIG. 35 is a perspective view showing an initial layered substructure fabricated in the step of FIG. 34.

FIG. 36 is a plan view showing a part of the initial layered substructure in a step that follows the step shown in FIG. 34.

FIG. 37 is a perspective view of a part of the initial layered substructure shown in FIG. 36.

FIG. 38 is a perspective view showing a plurality of preliminary electrodes in the initial layered substructure shown in FIG. 36.

FIG. 39 is a cross-sectional view showing a step that follows the step shown in FIG. 38.

FIG. 40 is a cross-sectional view showing a step that follows the step shown in FIG. 39.

FIG. 41 is a plan view showing the step of FIG. 40.

FIG. 42 is a perspective view of a preliminary wire formed in the step shown in FIG. 40.

FIG. 43 is a cross-sectional view showing a step that follows the step shown in FIG. 40.

FIG. 44 is a plan view showing the step of FIG. 43.

FIG. 45 is a perspective view of a wire formed in the step shown in FIG. 43.

FIG. 46 is a perspective view showing a step of a first modification example of a method of manufacturing the layered chip package according to the first embodiment of the invention.

FIG. 47 is a plan view showing a step of a second modification example of the method of manufacturing the layered chip package according to the first embodiment of the invention.

FIG. 48 is a perspective view showing the step of FIG. 47.

FIG. 49 is a side view showing connecting parts of the terminals of two vertically adjacent main packages.

FIG. 50 is an explanatory diagram for explaining misalignment between the terminals of two vertically adjacent main packages.

FIG. 51 is a perspective view showing an example of the method of stacking two main packages.

FIG. 52 is a perspective view of a module according to a second embodiment of the invention.

FIG. 53 is a perspective view of a layered chip package according to the second embodiment of the invention.

FIG. 54 is a perspective view showing the layered chip package of FIG. 53 as viewed from below.

FIG. 55 is a perspective view showing a first layer portion of the layered chip package shown in FIG. 53.

FIG. 56 is a perspective view showing a first additional portion of the second embodiment of the invention.

FIG. 57 is a perspective view of a layered chip package according to a third embodiment of the invention.

FIG. 58 is a perspective view showing the layered chip package of FIG. 57 as viewed from below.

FIG. 59 is a plan view showing a first layer portion of the layered chip package shown in FIG. 57.

FIG. 60 is a perspective view showing the first layer portion of the layered chip package shown in FIG. 57.

FIG. 61 is a perspective view showing a first additional portion of the third embodiment of the invention.

FIG. 62 is a perspective view of a layered chip package according to a fourth embodiment of the invention.

FIG. 63 is a perspective view showing the layered chip package of FIG. 62 as viewed from below.

FIG. 64 is a perspective view showing a first layer portion of the layered chip package shown in FIG. 62.

FIG. 65 is a perspective view showing a first additional portion of the fourth embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

Preferred embodiments of the present invention will now be described in detail with reference to the drawings. First, reference is made to FIG. 1 to FIG. 9 to describe the configurations of a layered chip package and a module including a plurality of layered chip packages according to a first embodiment of the invention. FIG. 1 is a perspective view of the module according to the present embodiment. FIG. 2 is a perspective view of the layered chip package according to the present embodiment. FIG. 3 is a perspective view showing the layered chip package of FIG. 2 as viewed from below. FIG. 4 is a plan view showing a first layer portion of the layered chip package of FIG. 2. FIG. 5 is a perspective view of the first layer portion shown in FIG. 4. FIG. 6 is a perspective view showing a second layer portion of the layered chip package of FIG. 2. FIG. 7 is a perspective view showing a third layer portion of the layered chip package of FIG. 2. FIG. 8 is a perspective view showing a fourth layer portion of the layered chip package of FIG. 2. FIG. 9 is a plan view showing a plurality of second terminals and bottom wiring of the layered chip package according to the present embodiment as viewed from above.

As shown in FIG. 1, the module 1D according to the present embodiment includes two stacked main packages, the two vertically adjacent main packages being electrically connected to each other. FIG. 1 shows an example where the module 1D includes two main packages 1A and 1B, the main package 1A being placed on the top of the main package 1B. In the following description, any main package will be designated by reference symbol 1M. The main package 1M corresponds to the layered chip package according to the present embodiment.

As shown in FIG. 2 and FIG. 3, the main package 1M includes a main body 2 that has a top surface 2 a, a bottom surface 2 b, and four side surfaces 2 c, 2 d, 2 e and 2 f. The side surfaces 2 c and 2 d are mutually opposite to each other. The side surfaces 2 e and 2 f are mutually opposite to each other. The main package 1M further includes wiring 3 that includes a plurality of wires W disposed on at least one of the side surfaces of the main body 2. In the example shown in FIG. 2 and FIG. 3, the plurality of wires W are disposed only on the side surface 2 c. The main body 2 includes a main part 2M having a top surface 2Ma and a bottom surface 2Mb. The main part 2M includes a plurality of layer portions 10 that are stacked. The plurality of wires W pass through all the plurality of layer portions 10. The plurality of wires W correspond to the plurality of lines according to the present invention.

The main body 2 further includes a plurality of first terminals 4 and a plurality of second terminals 5. The plurality of first terminals 4 are disposed on the top surface 2Ma of the main part 2M and electrically connected to the plurality of wires W. The plurality of second terminals 5 are disposed on the bottom surface 2Mb of the main part 2M and electrically connected to the plurality of wires W. The main body 2 further includes top wiring 4W, bottom wiring 5W, and an insulating layer 8. The top wiring 4W is disposed on the top surface 2Ma of the main part 2M and electrically connects the plurality of first terminals 4 to the plurality of wires W. The bottom wiring 5W is disposed on the bottom surface 2Mb of the main part 2M and electrically connects the plurality of second terminals 5 to the plurality of wires W. The insulating layer 8 is disposed around the plurality of second terminals 5 on the bottom surface 2Mb of the main part 2M and covers the bottom wiring 5W. In FIG. 2 and FIG. 3, the insulating layer 8 is shown by broken lines.

The plurality of second terminals 5 are positioned to overlap the plurality of first terminals 4 as viewed in a direction perpendicular to the top surface 2 a of the main body 2. When two main packages 1M are vertically arranged, the plurality of second terminals 5 of the upper one of the main packages 1M are therefore opposed to the plurality of first terminals 4 of the lower one. In the present embodiment, when two or more main packages 1M are stacked on each other, the plurality of second terminals 5 of the upper one of two vertically adjacent main packages 1M are electrically connected to the plurality of first terminals 4 of the lower one.

At least either the terminals 4 or the terminals 5 may each include a solder layer made of a solder material, the solder layer being exposed in the surface of each of the terminals 4 or each of the terminals 5. In such a case, the solder layers are heated to melt and then solidified, whereby the plurality of second terminals 5 of the upper one of two vertically adjacent main packages 1M are electrically connected to the plurality of first terminals 4 of the lower one.

The plurality of layer portions 10 are stacked between the top surface 2Ma and the bottom surface 2Mb of the main part 2M. Every two vertically adjacent layer portions 10 are bonded to each other with an adhesive, for example. As one example, FIG. 2 and FIG. 3 show a case where the main part 2M includes four layer portions 10. However, the number of the layer portions 10 to be included in the main part 2M is not limited to four, and may be any plural number. Hereinafter, the four layer portions 10 included in the main part 2M shown in FIG. 2 and FIG. 3 will be referred to as a first layer portion 10S1, a second layer portion 10S2, a third layer portion 10S3, and a fourth layer portion 10S4 in the order from top to bottom.

A description will now be given of the layer portions 10 (10S1, 10S2, 10S3, and 10S4) with reference to FIG. 4 to FIG. 8. FIG. 4 is a plan view of the first layer portion 10S1. FIG. 5 is a perspective view of the first layer portion 10S1 shown in FIG. 4. FIG. 6 is a perspective view of the second layer portion 10S2. FIG. 7 is a perspective view of the third layer portion 10S3. FIG. 8 is a perspective view of the fourth layer portion 10S4.

Each of the layer portions 10 includes a semiconductor chip 30. The semiconductor chip 30 has: a first surface 30 a with a device formed thereon; a second surface 30 b opposite to the first surface 30 a; a first side surface 30 c and a second side surface 30 d that are mutually opposite to each other; and a third side surface 30 e and a fourth side surface 30 f that are mutually opposite to each other. The side surfaces 30 c, 30 d, 30 e, and 30 f face toward the side surfaces 2 c, 2 d, 2 e, and 2 f of the main body 2, respectively.

Each of the layer portions 10 further includes an insulating portion 31 and a plurality of electrodes 32. The insulating portion 31 covers at least one of the four side surfaces of the semiconductor chip 30. The plurality of electrodes 32 are electrically connected to the plurality of wires W. The insulating portion 31 has at least one end face that is located in the at least one of the side surfaces of the main body 2 on which the plurality of wires W are disposed. In the example shown in FIG. 4 to FIG. 8, the insulating portion 31 covers all of the four side surfaces 30 c, 30 d, 30 e, and 30 f of the semiconductor chip 30, and has four end faces 31 c, 31 d, 31 e, and 31 f located in the four side surfaces of the main body 2. The four end faces 31 c, 31 d, 31 e, and 31 f of the insulating portion 31 lie outside the four side surfaces 30 c, 30 d, 30 e, and 30 f of the semiconductor chip 30, respectively.

In at least one of the plurality of layer portions 10 in a single main package 1M, the semiconductor chip 30 is electrically connected to two or more of the plurality of wires W via two or more of the plurality of electrodes 32.

A detailed description will now be given of the plurality of terminals 4 and 5, the plurality of wires W, and the plurality of electrodes 32 of the present embodiment. In the present embodiment, the plurality of second terminals 5 are electrically connected to corresponding ones of the plurality of first terminals 4 via the wires W to constitute a plurality of pairs of the first terminal 4 and the second terminal 5. The first terminal 4 and the second terminal 5 in each of the pairs are electrically connected to each other. The plurality of pairs include a plurality of non-overlapping terminal pairs. Each of the non-overlapping terminal pairs consists of any one of the first terminals 4 and any one of the second terminals 5, the first and second terminals 4 and 5 in each of the non-overlapping terminal pairs being electrically connected to each other and being positioned not to overlap each other as viewed in the direction perpendicular to the top surface 2 a of the main body 2. The plurality of pairs further include a plurality of overlapping terminal pairs. Each of the overlapping terminal pairs consists of any one of the first terminals 4 and any one of the second terminals 5, the first and second terminals 4 and 5 in each of the overlapping terminal pairs being electrically connected to each other and being positioned to overlap each other as viewed in the direction perpendicular to the top surface 2 a of the main body 2.

In the example shown in FIG. 2 and FIG. 3, the plurality of first terminals 4 include first-type terminals 4A1, 4A2, 4A3, and 4A4, second-type terminals 4B1, 4B2, 4B3, 4B4, 4B5, and 4B6, and third-type terminals 4C1, 4C2, 4C3, 4C4, 4C5, and 4C6. Similarly, the plurality of second terminals 5 include first-type terminals 5A1, 5A2, 5A3, and 5A4, second-type terminals 5B1, 5B2, 5B3, 5B4, 5B5, and 5B6, and third-type terminals 5C1, 5C2, 5C3, 5C4, 5C5, and 5C6. The terminals 5A1 to 5A4 are paired with the terminals 4A1 to 4A4, respectively. The terminals 5B1 to 5B6 are paired with the terminals 4B1 to 4B6, respectively. The terminals 5C1 to 5C6 are paired with the terminals 4C1 to 4C6, respectively.

In each of the pairs of terminals (4A1, 5A1), (4A2, 5A2), (4A3, 5A3), and (4A4, 5A4), the first terminal 4 and the second terminal 5 are electrically connected to each other, and are positioned to overlap each other as viewed in the direction perpendicular to the top surface 2 a of the main body 2. These pairs are thus the overlapping terminal pairs.

In each of the pairs of terminals (4B1, 5B1), (4B2, 5B2), (4B3, 5B3), (4B4, 5B4), (4B5, 5B5), (4B6, 5B6), (4C1, 5C1), (4C2, 5C2), (4C3, 5C3), (4C4, 5C4), (4C5, 5C5), and (4C6, 5C6), the first terminal 4 and the second terminal 5 are electrically connected to each other, and are positioned not to overlap each other as viewed in the direction perpendicular to the top surface 2 a of the main body 2. These pairs are thus the non-overlapping terminal pairs.

The terminals 5B1, 5B2, 5B3, 5B4, 5B5, 5B6, 5C1, 5C2, 5C3, 5C4, 5C5, and 5C6 are positioned to overlap the terminals 4C1, 4C2, 4C3, 4C4, 4C5, 4C6, 4B1, 4B2, 4B3, 4B4, 4B5, and 4B6, respectively, as viewed in the direction perpendicular to the top surface 2 a of the main body 2.

The plurality of wires W include first-type wires WA1, WA2, WA3, and WA4, second-type wires WB1, WB2, WB3, WB4, WB5, and WB6, and third-type wires WC1, WC2, WC3, WC4, WC5, and WC6. The first-type wires WA1, WA2, WA3, and WA4 electrically connect the first terminal 4 and the second terminal 5 in the overlapping terminal pairs (4A1, 5A1), (4A2, 5A2), (4A3, 5A3), and (4A4, 5A4), respectively. The plurality of first-type wires WA1 to WA4 have a use common to all of the layer portions 10 in the main part 2M. The plurality of first-type wires WA1 to WA4 correspond to the plurality of common lines according to the present invention.

The second-type wires WB1, WB2, WB3, WB4, WB5, and WB6 electrically connect the first terminal 4 and the second terminal 5 in the non-overlapping terminal pairs (4B1, 5B1), (4B2, 5B2), (4B3, 5B3), (4B4, 5B4), (4B5, 5B5), and (4B6, 5B6), respectively. The second-type wires WB1 to WB6 are electrically connected to none of the semiconductor chips 30 included in the plurality of layer portions 10 in the main part 2M. The second-type wires WB1 to WB6 will also be referred to as bypass wires.

The third-type wires WC1, WC2, WC3, WC4, WC5, and WC6 electrically connect the first terminal 4 and the second terminal 5 in the non-overlapping terminal pairs (4C1, 5C1), (4C2, 5C2), (4C3, 5C3), (4C4, 5C4), (4C5, 5C5), and (4C6, 5C6), respectively. The third-type wires WC1 to WC6 are used for electrical connection to the semiconductor chip 30 of at least one of the plurality of layer portions 10 in the main part 2M. The third-type wires WC1 to WC6 will also be referred to as chip connection wires. As described below, the third-type wires WC1 to WC6 are used by respective different layer portions 10. The wire WC1 is used by the layer portions 10S1 and 10S2. The wire WC2 is used by the layer portions 10S3 and 10S4. The wire WC3 is used by the layer portion 10S1. The wire WC4 is used by the layer portion 10S2. The wire WC5 is used by the layer portion 10S3. The wire WC6 is used by the layer portion 10S4. The third-type wires WC1 to WC6 correspond to the plurality of layer-dependent lines according to the present invention.

Each of the third-type wires WC1 to WC6 is greater than each of the first-type wires WA1 to WA4 in maximum width in a cross section orthogonal to the direction in which the plurality of layer portions 10 are stacked (hereinafter, referred to as the stacking direction). The stacking direction is the vertical direction in FIG. 2 and FIG. 3. In the present embodiment, when viewed in a cross section orthogonal to the stacking direction, in particular, the width of each of the third-type wires WC1 to WC6 in the direction parallel to the side surface 2 c is greater than that in the direction perpendicular to the side surface 2 c. The width in the direction parallel to the side surface 2 c is therefore the maximum width in the aforementioned cross section. The maximum width of each of the third-type wires WC1 to WC6 in the cross section orthogonal to the stacking direction is equal to or greater than, for example, twice the maximum width of each of the first-type wires WA1 to WA4 in the cross section orthogonal to the stacking direction. The maximum width of each of the second-type wires WB1 to WB6 in the cross section orthogonal to the stacking direction is equal or almost equal to the maximum width of each of the first-type wires WA1 to WA4 in the cross section orthogonal to the stacking direction.

On the top surface 2Ma of the main part 2M, as shown in FIG. 2, the first terminals 4A1 to 4A4, 4B1 to 4B6, and 4C1 to 4C6 are electrically connected to their respective closest wires WA1 to WA4, WB1 to WB6, and WC1 to WC6. On the bottom surface 2Mb of the main part 2M, as shown in FIG. 3, the terminals 5A1 to 5A4 among the plurality of second terminals 5 are electrically connected to their respective closest wires WA1 to WA4. Meanwhile, among the plurality of second terminals 5, the terminals 5B1 to 5B6 and 5C1 to 5C6 are respectively electrically connected to the wires WB1 to WB6 and WC1 to WC6 which are adjacent to their respective closest wires.

As shown in FIG. 4 to FIG. 8, the plurality of electrodes 32 include the following first- to fourth-type electrodes. The first-type electrodes 32A1, 32A2, 32A3, and 32A4 are located at positions corresponding to the terminals 4A1, 4A2, 4A3, and 4A4, respectively, as viewed in the direction perpendicular to the top surface 2 a of the main body 2. The first-type electrodes 32A1, 32A2, 32A3, and 32A4 are directly connected to the first-type wires WA1, WA2, WA3, and WA4, respectively, and are thereby electrically connected to the wires WA1, WA2, WA3, and WA4, respectively. In at least one of the plurality of layer portions 10 in the main part 2M, the first-type electrodes 32A1 to 32A4 are in contact with and electrically connected to the semiconductor chip 30. In FIG. 4, the dashed squares in the electrodes 32A1 to 32A4 represent the areas where the electrodes 32A1 to 32A4 make contact with the semiconductor chip 30. The first-type electrodes 32A1 to 32A4 correspond to the plurality of common electrodes according to the present invention.

The second-type electrodes 32B1, 32B2, 32B3, 32B4, 32B5, and 32B6 are located at positions corresponding to the terminals 4B1, 4B2, 4B3, 4B4, 4B5, and 4B6, respectively, as viewed in the direction perpendicular to the top surface 2 a of the main body 2. The second-type electrodes 32B1, 32B2, 32B3, 32B4, 32B5, and 32B6 are directly connected to the second-type wires WB1, WB2, WB3, WB4, WB5, and WB6, respectively, and are thereby electrically connected to the wires WB1, WB2, WB3, WB4, WB5, and WB6, respectively.

The third-type electrodes 32C1, 32C2, 32C3, 32C4, 32C5, and 32C6 are located at positions corresponding to the terminals 4C1, 4C2, 4C3, 4C4, 4C5, and 4C6, respectively, as viewed in the direction perpendicular to the top surface 2 a of the main body 2. The third-type electrodes 32C1, 32C2, 32C3, 32C4, 32C5, and 32C6 are directly connected to the third-type wires WC1, WC2, WC3, WC4, WC5, and WC6, respectively, and are thereby electrically connected to the wires WC1, WC2, WC3, WC4, WC5, and WC6, respectively. None of the second-type and third-type electrodes 32B1 to 32B6 and 32C1 to 32C6 are in contact with the semiconductor chip 30. The second-type electrodes 32B1 to 32B6 and the third-type electrodes 32C1 to 32C6 correspond to the plurality of non-contact electrodes according to the present invention. Each of the first- to third-type electrodes has a bifurcated portion which holds a wire to be connected.

The fourth-type electrodes 32D1 and 32D2 are ones with which different signals are associated from one layer portion 10 to another. Each of the fourth-type electrodes 32D1 and 32D2 corresponds to the selective connection electrode according to the present invention. Each of the fourth-type electrodes 32D1 and 32D2 is selectively electrically connected to only one of the third-type wires WC1 to WC6 that the layer portion 10 uses, as described below.

In the first layer portion 10S1, as shown in FIG. 4 and FIG. 5, the electrodes 32D1 and 32D2 are directly connected to the wires WC1 and WC3, respectively, and are thereby selectively electrically connected to the wires WC1 and WC3, respectively. Consequently, the electrode 32C1 and the electrode 32D1 are directly connected to a part of the wire WC1 passing through the first layer portion 10S1, and are thereby electrically connected to that part of the wire WC1. The electrode 32C3 and the electrode 32D2 are directly connected to a part of the wire WC3 passing through the first layer portion 10S1, and are thereby electrically connected to that part of the wire WC3. In the first layer portion 10S1, the bifurcated portion of the electrode 32C1 constitutes part of the electrode 32D1, and the bifurcated portion of the electrode 32C3 constitutes part of the electrode 32D2.

In the second layer portion 10S2, as shown in FIG. 6, the electrodes 32D1 and 32D2 are directly connected to the wires WC1 and WC4, respectively, and are thereby selectively electrically connected to the wires WC1 and WC4, respectively. Consequently, the electrode 32C1 and the electrode 32D1 are directly connected to a part of the wire WC1 passing through the second layer portion 10S2, and are thereby electrically connected to that part of the wire WC1. The electrode 32C4 and the electrode 32D2 are directly connected to a part of the wire WC4 passing through the second layer portion 10S2, and are thereby electrically connected to that part of the wire WC4. In the second layer portion 10S2, the bifurcated portion of the electrode 32C1 constitutes part of the electrode 32D1, and the bifurcated portion of the electrode 32C4 constitutes part of the electrode 32D2.

In the third layer portion 10S3, as shown in FIG. 7, the electrodes 32D1 and 32D2 are directly connected to the wires WC2 and WC5, respectively, and are thereby selectively electrically connected to the wires WC2 and WC5, respectively. Consequently, the electrode 32C2 and the electrode 32D1 are directly connected to a part of the wire WC2 passing through the third layer portion 10S3, and are thereby electrically connected to that part of the wire WC2. The electrode 32C5 and the electrode 32D2 are directly connected to a part of the wire WC5 passing through the third layer portion 10S3, and are thereby electrically connected to that part of the wire WC5. In the third layer portion 10S3, the bifurcated portion of the electrode 32C2 constitutes part of the electrode 32D1, and the bifurcated portion of the electrode 32C5 constitutes part of the electrode 32D2.

In the fourth layer portion 10S4, as shown in FIG. 8, the electrodes 32D1 and 32D2 are directly connected to the wires WC2 and WC6, respectively, and are thereby selectively electrically connected to the wires WC2 and WC6, respectively. Consequently, the electrode 32C2 and the electrode 32D1 are directly connected to a part of the wire WC2 passing through the fourth layer portion 10S4, and are thereby electrically connected to that part of the wire WC2. The electrode 32C6 and the electrode 32D2 are directly connected to a part of the wire WC6 passing through the fourth layer portion 10S4, and are thereby electrically connected to that part of the wire WC6. In the fourth layer portion 10S4, the bifurcated portion of the electrode 32C2 constitutes part of the electrode 32D1, and the bifurcated portion of the electrode 32C6 constitutes part of the electrode 32D2.

Two electrodes 32 are directly connected to a part of each of the wires WC1 to WC6 passing through at least one layer portion 10. To enable this, as previously mentioned, each of the wires WC1 to WC6 is configured to be greater than each of the wires WA1 to WA4 in maximum width in a cross section orthogonal to the stacking direction.

In at least one of the plurality of layer portions 10 in the main part 2M, the fourth-type electrodes 32D1 and 32D2 are in contact with and electrically connected to the semiconductor chip 30. In FIG. 4, the dashed squares in the electrodes 32D1 and 32D2 represent the areas where the electrodes 32D1 and 32D2 make contact with the semiconductor chip 30.

As shown in FIG. 4 to FIG. 8, the first- to third-type electrodes 32A1 to 32A4, 32B1 to 32B6, and 32C1 to 32C6 are arranged in the same layout in all the layer portions 10 (10S1, 10S2, 10S3, and 10S4) in the main part 2M. The fourth-type electrodes 32D1 and 32D2 vary in shape depending on which of the third-type wires WC1 to WC6 they are electrically connected to. In FIG. 4, the shapes of the electrodes 32D1 and 32D2 in the layer portions 10S2, 10S3, and 10S4 are shown by chain double-dashed lines.

In each of the layer portions 10S2, 10S3, and 10S4 other than the first layer portion 10S1 which is uppermost in the main part 2M, the insulating portion 31 also covers the first surface 30 a of the semiconductor chip 30 and the plurality of electrodes 32. In the first layer portion 10S1, the insulating portion 31 does not cover parts of the plurality of electrodes 32 except the electrodes 32D1 and 32D2, but covers the first surface 30 a of the semiconductor chip 30 and the remaining parts of the electrodes 32. The parts of the electrodes 32 not covered with the insulating portion 31 constitute conductor pads. Conductor layers are formed on the conductor pads. The conductor pads and conductor layers constitute the first terminals 4. In the present embodiment, the plurality of first terminals 4 are thus formed by using the plurality of electrodes 32 of the first layer portion 10S1 except the electrodes 32D1 and 32D2, that is, by using the plurality of common electrodes (32A1 to 32A4) and the plurality of non-contact electrodes (32B1 to 32B6 and 32C1 to 32C6) of the first layer portion 10S1. The first layer portion 10S1 is located at one end of the main part 2M in the stacking direction, and thus corresponds to the “one of the plurality of layer portions that is located at one end of the main part in a direction in which the plurality of layer portions are stacked” according to the present invention. The parts of the plurality of electrodes 32 of the first layer portion 10S1 covered with the insulating portion 31 constitute the top wiring 4W. In FIG. 1 to FIG. 3, part of the insulating portion 31 of the first layer portion 10S1 is shown by broken lines.

The plurality of layer portions 10 in the main package 1M include at least one first-type layer portion. The plurality of layer portions 10 in the main package 1M may further include at least one second-type layer portion. The semiconductor chip 30 of the first-type layer portion is non-malfunctioning, whereas the semiconductor chip 30 of the second-type layer portion is malfunctioning. Hereinafter, a non-malfunctioning semiconductor chip 30 will be referred to as a conforming semiconductor chip 30, and a malfunctioning semiconductor chip 30 will be referred to as a defective semiconductor chip 30. Hereinafter, the first-type layer portion will be designated by reference symbol 10A and the second-type layer portion will be designated by reference symbol 10B when the first-type layer portion and the second-type layer portion are to be distinguished from each other.

In the first-type layer portion 10A, the semiconductor chip 30 is electrically connected to two or more of the plurality of wires W. More specifically, in the first-type layer portion 10A, the electrodes 32A1 to 32A4, 32D1, and 32D2 are in contact with and electrically connected to the semiconductor chip 30. Consequently, in the first-type layer portion 10A, the semiconductor chip 30 is electrically connected to the wires WA1 to WA4, either one of the wires WC1 and WC2, and any one of the wires WC3 to WC6. In the second-type layer portion 10B, none of the electrodes 32A1 to 32A4, 32D1, and 32D2 are in contact with the semiconductor chip 30. Consequently, in the second-type layer portion 10B, the semiconductor chip 30 is electrically connected to none of the wires W.

If the main package 1M includes at least one second-type layer portion 10B, an additional portion to be described later is added to the main package 1M to form a composite layered chip package. If at least one of the main packages 1M in the module 1D includes at least one second-type layer portion 10B, an additional portion is added to the plurality of main packages 1M to form a composite layered chip package. This will be described in detail later.

The semiconductor chip 30 may be a memory chip that constitutes a memory such as a flash memory, DRAM, SRAM, MRAM, PROM, or FeRAM. Here, the semiconductor chip 30 includes a plurality of memory cells. In such a case, it is possible to implement a memory device of large capacity by using the module 1D which includes a plurality of semiconductor chips 30. With the module 1D according to the present embodiment, it is also possible to easily implement a memory of various capacities such as 64 GB (gigabytes), 128 GB, and 256 GB, by changing the number of the semiconductor chips 30 to be included in the module 1D.

Suppose that the semiconductor chip 30 includes a plurality of memory cells. In this case, even if one or more of the memory cells are defective, the semiconductor chip 30 is still conforming if it can function normally by employing the redundancy technique.

The semiconductor chips 30 are not limited to memory chips, and may be ones used for implementing other devices such as CPUs, sensors, and driving circuits for sensors.

The main package 1M or the layered chip package according to the present embodiment includes a plurality of pairs of the first terminal 4 and the second terminal 5, the first and second terminals 4 and 5 being electrically connected to each other by the respective wires W. The plurality of pairs include the plurality of non-overlapping terminal pairs. Consequently, according to the present embodiment, when two main packages 1M having the same configuration are stacked on each other and electrically connected to each other, some of a plurality of signals associated with the semiconductor chips 30 that fall on the same layers in the two main packages 1M can be easily made different between the two main packages 1M.

The layered chip package and the module 1D according to the present embodiment will now be described in more detail with reference to a case where the module 1D is used to construct a memory device. FIG. 19 is a block diagram showing the configuration of the memory device that uses the module 1D according to the embodiment. The memory device includes eight memory chips MC1, MC2, MC3, MC4, MC5, MC6, MC7, and MC8, and a controller 90 which controls these memory chips.

The memory chips MC1, MC2, MC3, MC4, MC5, MC6, MC7, and MC8 are the respective semiconductor chips 30 in the layer portions 10S1, 10S2, 10S3, and 10S4 of the main package 1A and the layer portions 10S1, 10S2, 10S3, and 10S4 of the main package 1B, which are shown in FIG. 1. Each of the memory chips includes a plurality of memory cells and a peripheral circuit such as an address decoder. The controller 90 is provided independent of the module 1D, and is electrically connected to the plurality of first terminals 4 of the main package 1A or the plurality of second terminals 5 of the main package 1B.

The memory device further includes a data bus 91 which electrically connects the controller 90 to the eight memory chips, and one or more common lines 92 which electrically connect the controller 90 to the eight memory chips. Each of the eight memory chips includes a plurality of electrode pads to which the data bus 91 is electrically connected, and one or more electrode pads to which the one or more common lines 92 are electrically connected. The data bus 91 transmits addresses, commands, data, etc. The one or more common lines 92 include power lines as well as signal lines for transmitting signals that are other than those transmitted by the data bus 91 and are used in common by the eight memory chips.

Each of the eight memory chips further includes an electrode pad CE for receiving a chip enable signal and an electrode pad R/B for outputting a ready/busy signal. The chip enable signal is a signal for controlling whether to select or deselect the memory chip. The ready/busy signal is a signal for indicating the operating state of the memory chip.

The memory device shown in FIG. 19 further includes signal lines 93C1, 93C2, 93C3, and 93C4. The signal line 93C1 electrically connects the controller 90 to the electrode pads CE of the memory chips MC1 and MC2, and transmits a chip enable signal CE1. The signal line 93C2 electrically connects the controller 90 to the electrode pads CE of the memory chips MC3 and MC4, and transmits a chip enable signal CE2. The signal line 93C3 electrically connects the controller 90 to the electrode pads CE of the memory chips MC5 and MC6, and transmits a chip enable signal CE3. The signal line 93C4 electrically connects the controller 90 to the electrode pads CE of the memory chips MC7 and MC8, and transmits a chip enable signal CE4. Thus, in the example shown in FIG. 19, the signal line 93C1 is used by the memory chips MC1 and MC2 in common, the signal line 93C2 is used by the memory chips MC3 and MC4 in common, the signal line 93C3 is used by the memory chips MC5 and MC6 in common, and the signal line 93C4 is used by the memory chips MC7 and MC8 in common. Nevertheless, eight signal lines for transmitting respective different chip enable signals to the memory chips may be provided instead of the signal lines 93C1, 93C2, 93C3, and 93C4.

The memory device shown in FIG. 19 further includes signal lines 93R1, 93R2, 93R3, 93R4, 93R5, 93R6, 93R7, and 93R8. One end of each of the signal lines 93R1 to 93R8 is electrically connected to the controller 90. The other ends of the signal lines 93R1 to 93R8 are electrically connected to the electrode pads R/B of the memory chips MC1 to MC8, respectively. The signal lines 93R1 to 93R8 transmit ready/busy signals R/B1 to R/B8, respectively.

Suppose that the main package 1M shown in FIG. 2 is the upper main package 1A of FIG. 1 and the main package 1M shown in FIG. 3 is the lower main package 1B of FIG. 1. A description will hereinafter be given of the relationship between the plurality of wires W in the main packages 1A and 1B and the plurality of signal lines shown in FIG. 19.

The terminals 4A1 to 4A4 of the main package 1A are electrically connected to the terminals 5A1 to 5A4 of the main package 1A via the wires WA1 to WA4 of the main package 1A. The terminals 5A1 to 5A4 of the main package 1A are electrically connected to the terminals 4A1 to 4A4 of the main package 1B. The terminals 4A1 to 4A4 of the main package 1B are electrically connected to the terminals 5A1 to 5A4 of the main package 1B via the wires WA1 to WA4 of the main package 1B. As a result, there are formed a plurality of electrical paths from the terminals 4A1-4A4 of the main package 1A to the terminals 5A1-5A4 of the main package 1B. The plurality of electrical paths constitute parts of the data bus 91 and the one or more common lines 92.

The terminal 4C1 of the main package 1A is electrically connected to the terminal 5C1 of the main package 1A via the wire WC1 of the main package 1A. The terminal 5C1 of the main package 1A is electrically connected to the terminal 4B1 of the main package 1B. The terminal 4B1 of the main package 1B is electrically connected to the terminal 5B1 of the main package 1B via the wire WB1 of the main package 1B. As a result, an electrical path is formed through the terminal 4C1 of the main package 1A, the wire WC1 of the main package 1A, the terminal 5C1 of the main package 1A, the terminal 4B1 of the main package 1B, the wire WB1 of the main package 1B, and the terminal 5B1 of the main package 1B. This electrical path constitutes part of the signal line 93C1 shown in FIG. 19. The chip enable signal CE1 is supplied to the electrical path via the terminal 4C1 of the main package 1A or the terminal 5B1 of the main package 1B. Such an electrical path is electrically connected only to the memory chips MC1 and MC2, that is, the semiconductor chips 30 in the layer portions 10S1 and 10S2 of the main package 1A, among the semiconductor chips 30 in all of the layer portions 10 in the main packages 1A and 1B. The reason is that, in the main package 1A, the electrical path runs through the chip connection wire WC1 which is electrically connected to the semiconductor chips 30 in the layer portions 10S1 and 10S2, while in the main package 1B, the electrical path runs through the bypass wire WB1. The electrical path can thus supply the chip enable signal CE1 to only the memory chips MC1 and MC2 among the memory chips MC1 to MC8.

Similarly, an electrical path is formed through the terminal 4C2 of the main package 1A, the wire WC2 of the main package 1A, the terminal 5C2 of the main package 1A, the terminal 4B2 of the main package 1B, the wire WB2 of the main package 1B, and the terminal 5B2 of the main package 1B. This electrical path constitutes part of the signal line 93C2 shown in FIG. 19. The chip enable signal CE2 is supplied to the electrical path via the terminal 4C2 of the main package 1A or the terminal 5B2 of the main package 1B. Such an electrical path is electrically connected only to the memory chips MC3 and MC4, that is, the semiconductor chips 30 in the layer portions 10S3 and 10S4 of the main package 1A, among the semiconductor chips in all of the layer portions 10 in the main packages 1A and 1B. The electrical path can thus supply the chip enable signal CE2 to only the memory chips MC3 and MC4 among the memory chips MC1 to MC8.

An electrical path is formed through the terminal 4B1 of the main package 1A, the wire WB1 of the main package 1A, the terminal 5B1 of the main package 1A, the terminal 4C1 of the main package 1B, the wire WC1 of the main package 1B, and the terminal 5C1 of the main package 1B. This electrical path constitutes part of the signal line 93C3 shown in FIG. 19. The chip enable signal CE3 is supplied to the electrical path via the terminal 4B1 of the main package 1A or the terminal 5C1 of the main package 1B. Such an electrical path is electrically connected only to the memory chips MC5 and MC6, that is, the semiconductor chips 30 in the layer portions 10S1 and 10S2 of the main package 1B, among the semiconductor chips in all of the layer portions 10 in the main packages 1A and 1B. The electrical path can thus supply the chip enable signal CE3 to only the memory chips MC5 and MC6 among the memory chips MC1 to MC8.

Similarly, an electrical path is formed through the terminal 4B2 of the main package 1A, the wire WB2 of the main package 1A, the terminal 5B2 of the main package 1A, the terminal 4C2 of the main package 1B, the wire WC2 of the main package 1B, and the terminal 5C2 of the main package 1B. This electrical path constitutes part of the signal line 93C4 shown in FIG. 19. The chip enable signal CE4 is supplied to the electrical path via the terminal 4B2 of the main package 1A or the terminal 5C2 of the main package 1B. Such an electrical path is electrically connected only to the memory chips MC7 and MC8, that is, the semiconductor chips 30 in the layer portions 10S3 and 10S4 of the main package 1B, among the semiconductor chips in all of the layer portions 10 in the main packages 1A and 1B. The electrical path can thus supply the chip enable signal CE4 to only the memory chips MC7 and MC8 among the memory chips MC1 to MC8.

An electrical path is formed through the terminal 4C3 of the main package 1A, the wire WC3 of the main package 1A, the terminal 5C3 of the main package 1A, the terminal 4B3 of the main package 1B, the wire WB3 of the main package 1B, and the terminal 5B3 of the main package 1B. This electrical path constitutes part of the signal line 93R1 shown in FIG. 19. The electrical path is electrically connected only to the memory chip MC1, that is, the semiconductor chip 30 in the layer portion 10S1 of the main package 1A, among the semiconductor chips in all of the layer portions 10 in the main packages 1A and 1B. The electrical path can thus transmit the ready/busy signal of only the memory chip MC1 among the memory chips MC1 to MC8, and output the ready/busy signal from the terminal 4C3 of the main package 1A or the terminal 5B3 of the main package 1B.

Similarly, there are formed three electrical paths that are each electrically connected to only a corresponding one of the memory chips MC2 to MC4 and can transmit and output the ready/busy signal of that memory chip alone.

An electrical path is formed through the terminal 4B3 of the main package 1A, the wire WB3 of the main package 1A, the terminal 5B3 of the main package 1A, the terminal 4C3 of the main package 1B, the wire WC3 of the main package 1B, and the terminal 5C3 of the main package 1B. This electrical path constitutes part of the signal line 93R5 shown in FIG. 19. The electrical path is electrically connected only to the memory chip MC5, that is, the semiconductor chip 30 in the layer portion 10S1 of the main package 1B, among the semiconductor chips in all of the layer portions 10 in the main packages 1A and 1B. The electrical path can thus transmit the ready/busy signal of only the memory chip MC5 among the memory chips MC1 to MC8, and output the ready/busy signal from the terminal 4B3 of the main package 1A or the terminal 5C3 of the main package 1B.

Similarly, there are formed three electrical paths that are each electrically connected to only a corresponding one of the memory chips MC6 to MC8 and can transmit and output the ready/busy signal of that memory chip alone.

According to the example described so far, the chip enable signals or ready/busy signals associated with the semiconductor chips 30 (memory chips) that fall on the same layers in the respective main packages 1A and 1B of the same configuration can easily be made different between the main packages 1A and 1B.

Now, a description will be given of remedies according to the present embodiment for coping with situations where at least one of the main packages 1M in the module 1D includes at least one second-type layer portion 10B. In such cases, according to the present embodiment, an additional portion is added to the plurality of main packages 1M to form a composite layered chip package 1.

The additional portion includes at least one additional semiconductor chip, and additional portion wiring. The additional portion wiring defines electrical connections between the at least one additional semiconductor chip and the plurality of first terminals 4 or second terminals 5 of any of the plurality of main packages 1M so that the at least one additional semiconductor chip substitutes for the semiconductor chip 30 of the at least one second-type layer portion 10B.

FIG. 10 is a perspective view showing a first additional portion. FIG. 11 is a perspective view showing the additional portion of FIG. 10 as viewed from below. FIG. 12 to FIG. 14 show second to fourth additional portions, respectively. Each of the first to fourth additional portions 51S1, 51S2, 51S3, and 51S4 includes an additional portion main body 60 and additional portion wiring 53. The additional portion main body 60 has a top surface, a bottom surface, and four side surfaces. The additional portion main body 60 includes an additional semiconductor chip 80. The additional semiconductor chip 80 has the same configuration as that of a conforming semiconductor chip 30. The additional portion main body 60 corresponds to a single first-type layer portion 10A. Hereinafter, any additional portion will be designated by reference numeral 51.

The additional portion wiring 53 includes: a plurality of additional portion wires AW that are disposed on at least one of the side surfaces of the additional portion main body 60; a plurality of first additional portion terminals 54 that are disposed on the top surface of the additional portion main body 60 and electrically connected to the plurality of additional portion wires AW; and a plurality of second additional portion terminals 55 that are disposed on the bottom surface of the additional portion main body 60 and electrically connected to the plurality of additional portion wires AW. The shape and layout of the plurality of first additional portion terminals 54 are the same as those of the plurality of first terminals 4 shown in FIG. 2. The plurality of second additional portion terminals 55 are positioned to overlap the plurality of first additional portion terminals 54. The plurality of additional portion wires AW electrically connect the first additional portion terminals 54 and the second additional portion terminals 55 that are positioned to overlap each other.

The additional portion main body 60 further includes an insulating portion 81 that covers the top and bottom surfaces and at least one of the four side surfaces of the additional semiconductor chip 80, and a plurality of electrodes 82 that are electrically connected to the plurality of additional portion wires AW. The insulating portion 81 has at least one end face located in the at least one of the side surfaces of the additional portion main body 60 on which the plurality of additional portion wires AW are disposed. In the example shown in FIG. 10 to FIG. 14, the insulating portion 81 covers all of the four side surfaces of the additional semiconductor chip 80, and has four end faces located in the four side surfaces of the additional portion main body 60. The electrodes 82 have their respective ends that are closer to the at least one of the side surfaces of the additional portion main body 60 on which the plurality of additional portion wires AW are disposed. The additional portion wires AW are electrically connected to those ends of the electrodes 82. The plurality of first additional portion terminals 54 and the plurality of second additional portion terminals 55 are exposed from the insulating portion 81. In FIG. 10 to FIG. 14, part of the insulating portion 81 is shown by broken lines.

The shape and layout of the plurality of electrodes 82 of the first additional portion 51S1 shown in FIG. 10 and FIG. 11 are the same as those of the plurality of electrodes 32 of the first layer portion 10S1 shown in FIG. 4 and FIG. 5. The shape and layout of the plurality of electrodes 82 of the second additional portion 51S2 shown in FIG. 12 are the same as those of the plurality of electrodes 32 of the second layer portion 10S2 shown in FIG. 6. The shape and layout of the plurality of electrodes 82 of the third additional portion 51S3 shown in FIG. 13 are the same as those of the plurality of electrodes 32 of the third layer portion 10S3 shown in FIG. 7. The shape and layout of the plurality of electrodes 82 of the fourth additional portion 51S4 shown in FIG. 14 are the same as those of the plurality of electrodes 32 of the fourth layer portion 10S4 shown in FIG. 8.

The plurality of electrodes 82 include electrodes 82D1 and 82D2 corresponding to the electrodes 32D1 and 32D2, and other plurality of electrodes. The plurality of first additional portion terminals 54 are formed by using the plurality of electrodes 82 except the electrodes 82D1 and 82D2. More specifically, parts of the plurality of electrodes 82 except the electrodes 82D1 and 82D2 constitute conductor pads. Conductor layers are formed on the conductor pads. The conductor pads and conductor layers constitute the first additional portion terminals 54. The electrodes 82 corresponding to the electrodes 32A1 to 32A4, and the electrodes 82D1 and 82D2 are in contact with and electrically connected to the additional semiconductor chip 80.

The plurality of additional portion wires AW include wires AWA1 to AWA4, AWB1 to AWB6, and AWC1 to AWC6 that correspond to the wires WA1 to WA4, WB1 to WB6, and WC1 to WC6, respectively.

In the additional portion 51S1, as shown in FIG. 10 and FIG. 11, the electrode 82D1 is electrically connected to the wire AWC1 to which an electrode corresponding to the electrode 32C1 is electrically connected, as with the layer portion 10S1. In the additional portion 51S1, the electrode 82D2 is electrically connected to the wire AWC3 to which an electrode corresponding to the electrode 32C3 is electrically connected. The additional portion 51S1 has the same configuration and functions as those of the layer portion 10S1. The additional portion 51S1 is to substitute for the layer portion 10S1 when the layer portion 10S1 is the second-type layer portion 10B.

In the additional portion 51S2 shown in FIG. 12, as with the layer portion 10S2, the electrode 82D1 is electrically connected to the wire AWC1 to which an electrode corresponding to the electrode 32C1 is electrically connected. In the additional portion 51S2, the electrode 82D2 is electrically connected to the wire AWC4 to which an electrode corresponding to the electrode 32C4 is electrically connected. The additional portion 51S2 has the same configuration and functions as those of the layer portion 10S2. The additional portion 51S2 is to substitute for the layer portion 10S2 when the layer portion 10S2 is the second-type layer portion 10B.

In the additional portion 51S3 shown in FIG. 13, as with the layer portion 10S3, the electrode 82D1 is electrically connected to the wire AWC2 to which an electrode corresponding to the electrode 32C2 is electrically connected. In the additional portion 51S3, the electrode 82D2 is electrically connected to the wire AWC5 to which an electrode corresponding to the electrode 32C5 is electrically connected. The additional portion 51S3 has the same configuration and functions as those of the layer portion 10S3. The additional portion 51S3 is to substitute for the layer portion 10S3 when the layer portion 10S3 is the second-type layer portion 10B.

In the additional portion 51S4 shown in FIG. 14, as with the layer portion 10S4, the electrode 82D1 is electrically connected to the wire AWC2 to which an electrode corresponding to the electrode 32C2 is electrically connected. In the additional portion 51S4, the electrode 82D2 is electrically connected to the wire AWC6 to which an electrode corresponding to the electrode 32C6 is electrically connected. The additional portion 51S4 has the same configuration and functions as those of the layer portion 10S4. The additional portion 51S4 is to substitute for the layer portion 10S4 when the layer portion 10S4 is the second-type layer portion 10B.

According to the present embodiment, in the second-type layer portion 10B, the plurality of electrodes 32 are not electrically connected to the semiconductor chip 30. Consequently, the defective semiconductor chip 30 in the second-type layer portion 10B is not electrically connected to the plurality of wires W, and is thus disabled.

According to the present embodiment, if at least one of the main packages 1M in the module 1D includes at least one second-type layer portion 10B, one or more additional portions 51 are added to form a composite layered chip package 1. Such a composite layered chip package 1 has the same functions as those of a module 1D that includes no defective semiconductor chip 30.

If the upper main package 1A of the module 1D shown in FIG. 1 includes at least one second-type layer portion 10B, one or more additional portions 51 can be provided on either the top of the main package 1A or the bottom of the main package 1B. If the additional portion 51 is provided on the top of the main package 1A, the plurality of second additional portion terminals 55 of the additional portion 51 are electrically connected to the plurality of first terminals 4 of the main package 1A. If the additional portion 51 is provided on the bottom of the main package 1B, the plurality of first additional portion terminals 54 of the additional portion 51 are electrically connected to the plurality of second terminals 5 of the main package 1B. In the case of adding two or more additional portions 51, one or more of the additional portions 51 may be provided on the top of the main package 1A, with the other one or more of the additional portions 51 provided on the bottom of the main package 1B.

If the lower main package 1B of the module 1D shown in FIG. 1 includes at least one second-type layer portion 10B, one or more additional portions 51 can be provided on the top of the main package 1B, or in other words, between the main package 1A and the main package 1B. In this case, the plurality of second additional portion terminals 55 of the additional portion 51 on the top of the main package 1B are electrically connected to the plurality of first terminals 4 of the main package 1B. On the other hand, the plurality of first additional portion terminals 54 of the additional portion 51 on the bottom of the main package 1A are electrically connected to the plurality of second terminals 5 of the main package 1A.

Where two or more additional portions 51 are stacked for use, the plurality of second additional portion terminals 55 of the upper one of every two vertically adjacent additional portions 51 are electrically connected to the plurality of first additional portion terminals 54 of the lower one.

In any of the composite layered chip packages 1 having the foregoing configurations, the additional semiconductor chip 80 in the additional portion 51 is electrically connected to the plurality of wires W of the main packages 1A and 1B via the additional portion wiring 53 so that the additional semiconductor chip 80 substitutes for a defective semiconductor chip 30.

FIG. 15 to FIG. 18 show first to fourth examples of composite layered chip packages 1 formed by adding one or more additional portions 51. The first example shown in FIG. 15 is where the layer portion 10S1 of the main package 1A is the second-type layer portion 10B. In this example, the additional portion 51S1 to substitute for the layer portion 10S1 is placed on the top of the main package 1A to form a composite layered chip package 1. In this example, as with the layer portion 10S1, the electrodes 82D1 and 82D2 of the additional portion 51S1 are electrically connected to the wires WC1 and WC3 of the main package 1A, respectively. If the layer portion 10S2, 10S3, or 10S4 of the main package 1A is the second-type layer portion 10B, the additional portion 51S2, 51S3, or 51S4 can be placed on the top of the main package 1A, instead of the additional portion 51S1.

The second example shown in FIG. 16 is where the layer portion 10S3 of the main package 1B is the second-type layer portion 10B. In this example, the additional portion 51S3 to substitute for the layer portion 10S3 is placed on the top of the main package 1B to form a composite layered chip package 1. In this example, as with the layer portion 10S3, the electrodes 82D1 and 82D2 of the additional portion 51S3 are electrically connected to the wires WC2 and WC5 of the main package 1B, respectively. If the layer portion 10S1, 10S2, or 10S4 of the main package 1B is the second-type layer portion 10B, the additional portion 51S1, 51S2, or 51S4 can be placed on the top of the main package 1B, instead of the additional portion 51S3.

The third example shown in FIG. 17 is where the layer portion 10S1 of the main package 1A is the second-type layer portion 10B. In this example, the additional portion 51S1 to substitute for the layer portion 10S1 is placed on the bottom of the main package 1B to form a composite layered chip package 1. In this example, the electrode 82D1 of the additional portion 51S1 is electrically connected to the wire WC1 of the main package 1A via the terminal 5B1, the wire WB1, and the terminal 4B1 of the main package 1B and the terminal 5C1 of the main package 1A. The electrode 82D2 of the additional portion 51S1 is electrically connected to the wire WC3 of the main package 1A via the terminal 5B3, the wire WB3 and the terminal 4B3 of the main package 1B and the terminal 5C3 of the main package 1A. If the layer portion 10S2, 10S3, or 10S4 of the main package 1A is the second-type layer portion 10B, the additional portion 51S2, 51S3, or 51S4 can be placed on the bottom of the main package 1B, instead of the additional portion 51S1.

The fourth example shown in FIG. 18 is where the layer portion 10S1 of the main package 1A and the layer portion 10S3 of the main package 1B are second-type layer portions 10B. In this example, the additional portion 51S1 to substitute for the layer portion 10S1 of the main package 1A is placed on the top of the main package 1A and the additional portion 51S3 to substitute for the layer portion 10S3 of the main package 1B is placed on the top of the main package 1B to form a composite layered chip package 1. In this example, the electrodes 82D1 and 82D2 of the additional portion 51S1 are electrically connected to the wires WC1 and WC3 of the main package 1A, respectively, as with the layer portion 10S1 of the main package 1A. On the other hand, the electrodes 82D1 and 82D2 of the additional portion 51S3 are electrically connected to the wires WC2 and WC5 of the main package 1B, respectively, as with the layer portion 10S3 of the main package 1B.

Needless to say, possible configurations of the composite layered chip package 1 including one or more additional portions 51 are not limited to the first to fourth examples shown in FIG. 15 to FIG. 18. According to the present embodiment, it is possible to easily provide a composite layered chip package 1 having the same functions as those of a module 1D that includes no defective semiconductor chip 30, regardless of the number and locations of the second-type layer portions 10B in the main packages 1A and 1B.

In the present embodiment, there may be provided an additional portion that includes two or more layer portions each including an additional semiconductor chip 80. Such an additional portion may be electrically connected to a main package 1M that includes two or more second-type layer portions 10B. In such a case, for each of the layer portions in the additional portion, the additional portion wires for the electrodes 82D1 and 82D2 to be electrically connected to are selected according to which of the layer portions in the main package 1M is to be substituted by the layer portion of the additional portion.

FIG. 19 shows a case where the module 1D includes no defective semiconductor chip 30 (memory chip). As one example, FIG. 20 shows a remedy for coping with the situation where the semiconductor chip 30 of the layer portion 10S4 of the main package 1A, i.e., the memory chip MC4, is defective. FIG. 20 shows the relationship between the plurality of memory chips and the signal lines 93C1 to 93C4 and 93R1 to 93R8.

The memory chip MC4 being defective, the plurality of electrodes 32 in the layer portion 10S4 of the main package 1A are not electrically connected to the memory chip MC4. Consequently, the defective memory chip MC4 is not electrically connected to the plurality of wires W, and is thus disabled. In such a case, according to the present embodiment, the additional portion 51S4 to substitute for the layer portion 10S4 is provided on either the top of the main package 1A or the bottom of the main package 1B to form a composite layered chip package 1.

In FIG. 20, the symbol AMC represents the memory chip that is the additional semiconductor chip 80 of the additional portion 51S4. The memory chip AMC is electrically connected to the plurality of wires W of the main package 1A via the additional portion wiring 53. In particular, the electrodes 82D1 and 82D2 of the additional portion 51S4 are electrically connected to the wires WC2 and WC6 of the main package 1A, respectively, as with the layer portion 10S4 of the main package 1A. Consequently, as shown in FIG. 20, the electrode pads CE and R/B of the memory chip AMC are electrically connected to the signal lines 93C2 and 93R4, respectively. The composite layered chip package 1 thus has the same functions as those of a module 1D that includes no defective semiconductor chip 30 (memory chip).

Reference is now made to FIG. 21 to describe an example of the configuration of the memory cells included in the semiconductor chip 30 (memory chip). The memory cell 40 shown in FIG. 21 includes a source 62 and a drain 63 formed near a surface of a P-type silicon substrate 61. The source 62 and the drain 63 are both N-type regions. The source 62 and the drain 63 are disposed at a predetermined distance from each other so that a channel composed of a part of the P-type silicon substrate 61 is provided between the source 62 and the drain 63. The memory cell 40 further includes an insulating film 64, a floating gate 65, an insulating film 66, and a control gate 67 that are stacked in this order on the surface of the substrate 61 at the location between the source 62 and the drain 63. The memory cell 40 further includes an insulating layer 68 that covers the source 62, the drain 63, the insulating film 64, the floating gate 65, the insulating film 66 and the control gate 67. The insulating layer 68 has contact holes that open in the tops of the source 62, the drain 63 and the control gate 67, respectively. The memory cell 40 includes a source electrode 72, a drain electrode 73, and a control gate electrode 77 that are formed on the insulating layer 68 at locations above the source 62, the drain 63 and the control gate 67, respectively. The source electrode 72, the drain electrode 73 and the control gate electrode 77 are connected to the source 62, the drain 63 and the control gate 67, respectively, through the corresponding contact holes.

A description will now be given of a method of manufacturing the layered chip package and a method of manufacturing the module according to the present embodiment. The method of manufacturing the module according to the embodiment includes the steps of: fabricating a plurality of main packages 1M; and stacking the plurality of main packages 1M and, for any two vertically adjacent main packages 1M, electrically connecting the plurality of second terminals 5 of the upper main package 1M to the plurality of first terminals 4 of the lower main package 1M. The method of manufacturing the layered chip package according to the embodiment is a method by which a plurality of layered chip packages, i.e., a plurality of main packages 1M, are manufactured.

The step of fabricating a plurality of main packages 1M includes, as a series of steps for fabricating each main package 1M, the steps of: fabricating a layered substructure by stacking a plurality of substructures each of which includes a plurality of preliminary layer portions that are arrayed, each of the preliminary layer portions being intended to become one of the layer portions 10 included in the main part 2M, the plurality of substructures being intended to be cut later at positions of boundaries between every adjacent ones of the preliminary layer portions; and cutting the layered substructure so that the plurality of main packages 1M are produced. As will be detailed later, the layered substructure includes: a plurality of pre-separation main bodies that are arrayed, the plurality of pre-separation main bodies being intended to be separated from each other later into individual main bodies 2; a plurality of accommodation parts for accommodating a plurality of preliminary wires, the plurality of accommodation parts being disposed between adjacent two of the pre-separation main bodies; and the plurality of preliminary wires accommodated in the plurality of accommodation parts. In the step of cutting the layered substructure, the plurality of pre-separation main bodies are separated from each other, and the wires W are formed by the preliminary wires.

The step of fabricating the layered substructure includes the steps of: fabricating an initial layered substructure that is to later become the layered substructure; forming the plurality of accommodation parts in the initial layered substructure; and forming the plurality of preliminary wires in the plurality of accommodation parts so that the initial layered substructure becomes the layered substructure.

The step of fabricating the initial layered substructure will now be described in detail with reference to FIG. 22 to FIG. 35. In the step of fabricating the initial layered substructure, a pre-substructure wafer 101 is fabricated first. The pre-substructure wafer 101 includes a plurality of pre-semiconductor-chip portions 30P that are arrayed, the pre-semiconductor-chip portions 30P being intended to become individual semiconductor chips 30. FIG. 22 is a plan view of the pre-substructure wafer 101. FIG. 23 is a magnified plan view of a part of the pre-substructure wafer 101 shown in FIG. 22. FIG. 24 shows a cross section taken along line 24-24 of FIG. 23.

Specifically, in the step of fabricating the pre-substructure wafer 101, a semiconductor wafer 100 having two mutually opposite surfaces is subjected to processing, such as a wafer process, at one of the two surfaces. This forms the pre-substructure wafer 101 in which a plurality of pre-semiconductor-chip portions 30P are arrayed. Each of the pre-semiconductor-chip portions 30P includes a device. In the pre-substructure wafer 101, the plurality of pre-semiconductor-chip portions 30P may be in a row, or in a plurality of rows such that a number of pre-semiconductor-chip portions 30P are aligned both in vertical and horizontal directions. The following description assumes that the plurality of pre-semiconductor-chip portions 30P in the pre-substructure wafer 101 are in a plurality of rows such that a number of pre-semiconductor-chip portions 30P are aligned both in vertical and horizontal directions. The semiconductor wafer 100 may be a silicon wafer, for example. The wafer process is a process in which a semiconductor wafer is processed into a plurality of devices yet to be separated into a plurality of chips. For ease of understanding, FIG. 22 depicts the pre-semiconductor-chip portions 30P larger relative to the semiconductor wafer 100. For example, if the semiconductor wafer 100 is a 12-inch wafer and the top surface of each pre-semiconductor-chip portion 30 is 8 to 10 mm long at each side, then 700 to 900 pre-semiconductor-chip portions 30P are obtainable from a single semiconductor wafer 100.

As shown in FIG. 24, the pre-semiconductor-chip portions 30P include a device-forming region 37 formed near one of the two surfaces of the semiconductor wafer 100. The device-forming region 37 is a region where devices are formed by processing the one of the two surfaces of the semiconductor wafer 100. The pre-semiconductor-chip portions 30P further include a plurality of electrode pads 38 disposed on the device-forming region 37, and a passivation film 39 disposed on the device-forming region 37. The passivation film 39 is made of an insulating material such as phospho-silicate-glass (PSG), silicon nitride, or polyimide resin. The passivation film 39 has a plurality of openings for exposing the top surfaces of the plurality of electrode pads 38. The plurality of electrode pads 38 are located in the positions corresponding to the plurality of electrodes to be formed later, and are electrically connected to the devices formed in the device-forming region 37. Hereinafter, the surface of the pre-substructure wafer 101 located closer to the plurality of electrode pads 38 and the passivation film 39 will be referred to as a first surface 101 a, and the opposite surface will be referred to as a second surface 101 b.

In the step of fabricating the initial layered substructure, next, a wafer sort test is performed to distinguish the plurality of pre-semiconductor-chip portions 30P included in the pre-substructure wafer 101 into non-malfunctioning pre-semiconductor-chip portions and malfunctioning pre-semiconductor-chip portions. In this step, a probe of a testing device is brought into contact with the plurality of electrode pads 38 of each pre-semiconductor-chip portion 30P so that whether the pre-semiconductor-chip portion 30P functions normally or not is tested with the testing device. In FIG. 22, the pre-semiconductor-chip portions 30P marked with “NG” are malfunctioning ones, and the other pre-semiconductor-chip portions 30P are non-malfunctioning ones. This step provides location information on non-malfunctioning pre-semiconductor-chip portions 30P and malfunctioning pre-semiconductor-chip portions 30P in each pre-substructure wafer 101. The location information is used in a step to be performed later. The passivation film 39 may be formed after the wafer sort test, and may thus be yet to be formed at the time of performing the wafer sort test.

FIG. 25 is a plan view showing a step that follows the step shown in FIG. 23. FIG. 26 shows a cross section taken along line 26-26 of FIG. 25. In this step, first, a protection layer 103 is formed to cover the first surface 101 a of the pre-substructure wafer 101. The protection layer 103 is made of a photoresist, for example. Next, a plurality of grooves 104 that open in the first surface 101 a of the pre-substructure wafer 101 are formed in the pre-substructure wafer 101 so as to define the respective areas of the plurality of pre-semiconductor-chip portions 30P. Note that the protection layer 103 is not shown in FIG. 25.

In the positions of boundaries between every two adjacent pre-semiconductor-chip portions 30P, the grooves 104 are formed to pass through the boundaries between every two adjacent pre-semiconductor-chip portions 30P. The grooves 104 are formed such that their bottoms do not reach the second surface 101 b of the pre-substructure wafer 101. The grooves 104 have a width in the range of 50 to 150 μm, for example. The grooves 104 have a depth in the range of 20 to 80 μm, for example.

The grooves 104 may be formed using a dicing saw or by performing etching, for example. The etching may be reactive ion etching or anisotropic wet etching using KOH as the etching solution, for example. When forming the grooves 104 by etching, the protection layer 103 made of a photoresist may be patterned by photolithography to form an etching mask. The protection layer 103 is removed after the grooves 104 are formed. As a result, there is formed a pre-polishing substructure main body 105. The pre-substructure wafer 101 with the plurality of grooves 104 formed therein constitutes the pre-polishing substructure main body 105.

FIG. 27 shows a step that follows the step shown in FIG. 26. In this step, an insulating film 106P is formed to fill the plurality of grooves 104 of the pre-polishing substructure main body 105 and to cover the plurality of electrode pads 38 and the passivation film 39. The insulating film 106P is to later become part of the insulating portion 31. The insulating film 106P may be formed of a resin such as an epoxy resin or a polyimide resin. The insulating film 106P may also be formed of a photosensitive material such as a sensitizer-containing polyimide resin. The insulating film 106P may also be formed of an inorganic material such as silicon oxide or silicon nitride.

It is preferred that the insulating film 106P be formed of a resin having a low thermal expansion coefficient. If the insulating film 106P is formed of a resin having a low thermal expansion coefficient, it becomes easy to cut the insulating film 106P when it is cut later with a dicing saw.

The insulating film 106P is preferably transparent. If the insulating film 106P is transparent, alignment marks that are recognizable through the insulating film 106P can be formed on the insulating film 106P. Such alignment marks facilitates alignment of a plurality of substructures to be stacked.

The insulating film 106P may include a first layer that fills the plurality of grooves 104, and a second layer that covers the first layer, the electrode pads 38 and the passivation film 39. In such a case, the first layer and the second layer may be formed of the same material or different materials. The first layer is preferably formed of a resin having a low thermal expansion coefficient. The second layer may be formed of a photosensitive material such as a sensitizer-containing polyimide resin. The first layer may be flattened at the top by, for example, ashing or chemical mechanical polishing (CMP) before forming the second layer on the first layer.

If the passivation film 39 is not formed by the time of performing the wafer sort test, the second layer of the insulating film 106P may be used as the passivation film. In such a case, the second layer may be formed of an inorganic material such as silicon oxide or silicon nitride. If the second layer of the insulating film 106P is to be used as the passivation film, the plurality of openings for exposing the top surfaces of the plurality of electrode pads 38 are not formed in the second layer as initially formed.

Reference is now made to FIG. 28 to describe the step of forming the plurality of openings for exposing the plurality of electrode pads 38 in the insulating film 106P in the non-malfunctioning pre-semiconductor-chip portions 30P. FIG. 28 shows a step that follows the step shown in FIG. 27.

Here, a description will initially be given of a case where either the entire insulating film 106P or the second layer of the insulating film 106P is formed of a negative photosensitive material and photolithography is employed to form the openings in the insulating film 106P. In this example, first, all the pre-semiconductor-chip portions 30P are simultaneously subjected to the exposure of the insulating film 106P by using a first mask (not shown). The first mask has such a pattern that the areas of the insulating film 106P where to form the openings are not irradiated with light while the other areas are irradiated with light. The non-irradiated areas of the insulating film 106P are soluble in a developing solution, and the irradiated areas become insoluble in the developing solution.

Next, using a stepping projection exposure apparatus, or a so-called stepper, the insulating film 106P is selectively exposed in the malfunctioning pre-semiconductor-chip portions 30P only, using a second mask (not shown). This step uses the location information on non-malfunctioning pre-semiconductor-chip portions 30P and malfunctioning pre-semiconductor-chip portions 30P in each pre-substructure wafer 101 which was obtained by the wafer sort test. In FIG. 28, the pre-semiconductor-chip portion 30P on the left is a non-malfunctioning one, whereas the pre-semiconductor-chip portion 30P on the right is a malfunctioning one. The second mask entirely transmits light. As a result of this exposure process, the entire insulating film 106P in the malfunctioning pre-semiconductor-chip portions 30P becomes insoluble in the developing solution.

Next, the insulating film 106P is developed with the developing solution. As a result, as shown in FIG. 28, a plurality of openings 106 a for exposing the plurality of electrode pads 38 are formed in the insulating film 106P in each non-malfunctioning pre-semiconductor-chip portion 30P (the left side). On the other hand, no openings 106 a are formed in the insulating film 106P in each malfunctioning pre-semiconductor-chip portion 30P (the right side). After the development, the area of the insulating film 106P corresponding to the non-malfunctioning pre-semiconductor-chip portion 30P becomes a first-type insulating layer 106A, and the area corresponding to the malfunctioning pre-semiconductor-chip portion 30P becomes a second-type insulating layer 106B. The first-type insulating layer 106A has the plurality of openings 106 a for exposing the plurality of electrode pads 38 and surrounds the plurality of electrode pads 38. The second-type insulating layer 106B covers the plurality of electrode pads 38 so as to avoid exposure.

Now, an example of the method for forming the plurality of openings 106 a in the insulating film 106P will be described for the case where either the entire insulating film 106P or the second layer of the insulating film 106P is formed of a non-photosensitive material. In this example, first, a negative photoresist layer is formed on the insulating film 106P. The photoresist layer is then exposed and developed by the same method as with the exposure and development of the insulating film 106P described above. Consequently, in the non-malfunctioning pre-semiconductor-chip portions 30P, a plurality of openings are formed in the photoresist layer at positions corresponding to the plurality of electrode pads 38. Meanwhile, no opening is formed in the photoresist layer in the malfunctioning pre-semiconductor-chip portions 30P. Next, the insulating film 106P is selectively etched by using the photoresist layer as the etching mask, whereby the plurality of openings 106 a are formed in the insulating film 106P. The photoresist layer may be subsequently removed, or may be left and used as part of the insulating layers 106A and 106B.

FIG. 29 and FIG. 30 show a step that follows the step shown in FIG. 28. FIG. 29 shows a cross section taken along line 29-29 of FIG. 30. In this step, a plurality of preliminary electrodes 32P are formed on the insulating layers 106A and 106B by plating, for example. The plurality of preliminary electrodes 32P are to later become the first- to fourth-type electrodes shown in FIG. 4 and FIG. 5. FIG. 29 shows a preliminary electrode 32A4P that is to later become the electrode 32A4. In each of the non-malfunctioning pre-semiconductor-chip portions 30P, the preliminary electrodes 32P that are to later become the first-type electrodes 32A1 to 32A4 and the fourth-type electrodes 32D1 and 32D2 are in contact with and electrically connected to the respective corresponding electrode pads 38 through the plurality of openings 106 a of the insulating layer 106A. In each of the non-malfunctioning pre-semiconductor-chip portions 30P, the preliminary electrodes 32P that are to later become the second-type electrodes 32B1 to 32B6 and the third-type electrodes 32C1 to 32C6 are not in contact with the pre-semiconductor-chip portion 30P. In each of the malfunctioning pre-semiconductor-chip portions 30P, on the other hand, none of the preliminary electrodes 32P are in contact with the pre-semiconductor-chip portion 30P since no openings 106 a are formed in the insulating layer 106B.

In this way, there is fabricated a pre-polishing substructure 109 shown in FIG. 29 and FIG. 30. The pre-polishing substructure 109 has a first surface 109 a corresponding to the first surface 101 a of the pre-substructure wafer 101, and a second surface 109 b corresponding to the second surface 101 b of the pre-substructure wafer 101.

The preliminary electrodes 32P are formed of a conductive material such as Cu. In the case of forming the preliminary electrodes 32P by plating, a seed layer for plating is formed first. Next, a photoresist layer is formed on the seed layer. The photoresist layer is then patterned by photolithography to form a frame that has a plurality of openings in which the preliminary electrodes 32P are to be accommodated later. Next, plating layers to constitute respective portions of the preliminary electrodes 32P are formed by plating on the seed layer in the openings of the frame. The plating layers have a thickness in the range of 5 to 15 μm, for example. Next, the frame is removed, and portions of the seed layer other than those lying under the plating layers are also removed by etching. The plating layers and the remaining portions of the seed layer under the plating layers thus constitute the preliminary electrodes 32P.

As shown in FIG. 30, the plurality of preliminary electrodes 32P include respective ring-shaped portions 132 that are disposed near a side of the pre-semiconductor-chip portion 30P corresponding to the side surface 30 c of the semiconductor chip 30. The ring-shaped portions 132 have respective openings. In the area where a third-type electrode and a fourth-type electrode are electrically connected to a single wire W, the ring-shaped portion 132 of a preliminary electrode 32P that is to become one of the electrodes 32C1 to 32C6 also serves as the ring-shaped portion of a preliminary electrode 32P that is to become the electrode 32D1 or 32D2.

FIG. 31 shows a step that follows the step shown in FIG. 29. In this step, using an insulating adhesive, the pre-polishing substructure 109 is bonded to a plate-shaped jig 112 shown in FIG. 31, with the first surface 109 a of the pre-polishing substructure 109 arranged to face a surface of the jig 112. The pre-polishing substructure 109 bonded to the jig 112 will hereinafter be referred to as a first pre-polishing substructure 109. The reference numeral 113 in FIG. 31 indicates an insulating layer formed by the adhesive. The insulating layer 113 is to become a part of the insulating portion 31 later. The plurality of preliminary electrodes 32P are covered with the insulating layer 113. The insulating layer 113 may be formed of a photosensitive adhesive.

FIG. 32 shows a step that follows the step shown in FIG. 31. In this step, the second surface 109 b of the first pre-polishing substructure 109 is polished. This polishing is performed until the plurality of grooves 104 are exposed. The broken line in FIG. 31 indicates the level of the second surface 109 b after the polishing. By polishing the second surface 109 b of the first pre-polishing substructure 109, the first pre-polishing substructure 109 is thinned. Consequently, there is formed a substructure 110 in the state of being bonded to the jig 112. The substructure 110 has a thickness of 20 to 80 μm, for example. Hereinafter, the substructure 110 bonded to the jig 112 will be referred to as a first substructure 110. The first substructure 110 has a first surface 110 a corresponding to the first surface 109 a of the first pre-polishing substructure 109, and a second surface 110 b opposite to the first surface 110 a. The second surface 110 b is the polished surface. By polishing the second surface 109 b of the first pre-polishing substructure 109 until the plurality of grooves 104 are exposed, the plurality of pre-semiconductor-chip portions 30P are separated from each other into individual semiconductor chips 30.

FIG. 33 shows a step that follows the step shown in FIG. 32. In this step, first, a pre-polishing substructure 109 is bonded to the first substructure 110 bonded to the jig 112, using an insulating adhesive. The pre-polishing substructure 109 is bonded to the first substructure 110 with the first surface 109 a arranged to face the polished surface, i.e., the second surface 110 b, of the first substructure 110. Hereinafter, the pre-polishing substructure 109 that is bonded to the first substructure 110 will be referred to as a second pre-polishing substructure 109. The insulating layer 113 formed by the adhesive between the first substructure 110 and the second pre-polishing substructure 109 covers the electrodes 32 of the second pre-polishing substructure 109, and is to become part of the insulating portion 31 later.

Next, although not shown, the second surface 109 b of the second pre-polishing substructure 109 is polished. This polishing is performed until the plurality of grooves 104 are exposed. By polishing the second surface 109 b of the second pre-polishing substructure 109, the second pre-polishing substructure 109 is thinned. Consequently, there is formed a second substructure 110 in the state of being bonded to the first substructure 110. The second substructure 110 has a thickness of, for example, 20 to 80 μm, as does the first substructure 110.

The same step as shown in FIG. 33 may subsequently be repeated to form three or more substructures 110 into a stack. FIG. 34 shows a step that follows the step shown in FIG. 33. After the same step as shown in FIG. 33 is repeated to form a predetermined number of substructures 110 into a stack, the stack of the predetermined number of substructures 110 is released from the jig 112. FIG. 34 shows an example where a stack of four substructures 110 is formed.

Next, part of the insulating layer 113 is removed from the uppermost substructure 110 of the stack by, for example, etching, whereby the plurality of electrodes 32 except the electrodes 32D1 and 32D2 are exposed in part to form a plurality of conductor pads. Next, a plurality of conductor layers are formed on the plurality of conductor pads, whereby the plurality of first terminals 4 are formed. The parts of the plurality of electrodes 32 covered with the insulating layer 113 constitute the top wiring 4W.

Next, the plurality of second terminals 5, the bottom wiring 5W, and the insulating layer 8 are formed on the bottom surface of the lowermost substructure 110 of the stack. The plurality of terminals 5 and the bottom wiring 5W are each formed of a conductive material such as Cu or Au. The plurality of second terminals 5, the bottom wiring 5W, and the insulating layer 8 are formed in the following manner, for example. Initially, a first conductor layer to become the bottom wiring 5W and respective parts of the plurality of second terminals 5 is formed on the bottom surface of the lowermost substructure 110 of the stack by plating, for example. Next, the insulating layer 8 is formed to cover the first conductor layer. Next, part of the insulating layer 8 is removed by, for example, etching. The first conductor layer is thereby exposed in part to form a plurality of conductor pads. Next, a plurality of second conductor layers are formed on the plurality of conductor pads, whereby the plurality of second terminals 5 are formed. The second terminals 5 are each composed of the conductor pad and the second conductor layer. The part of the first conductor layer covered with the insulating layer 8 constitutes the bottom wiring 5W.

At least either the terminals 4 or the terminals 5 may each include a solder layer made of a solder material, the solder layer being exposed in the surface of each of the terminals 4 or each of the terminals 5. An example of the solder material is AuSn. The solder layer has a thickness in the range of 1 to 2 μm, for example. If the terminals 4 are to include the solder layer, the solder layer is formed on the surface of each of the electrodes 32 of the uppermost substructure 110 directly or via an underlayer by plating, for example. If the terminals 5 are to include the solder layer, the first conductor layer to become respective parts of the terminals 5 is formed on the bottom surface of the lowermost substructure 110 of the stack, using a conductive material such as Cu or Au. The solder layer as the second conductor layer is then formed on the surface of the first conductor layer directly or via an underlayer by plating, for example.

AuSn is highly adhesive to Au. When either the terminals 4 or the terminals 5 each include a solder layer made of AuSn, it is preferred that the other of the terminals 4 and 5 each include an Au layer that is exposed in the surface of each of the terminals 4 or 5. The Au layer is formed by plating or sputtering, for example. The melting point of AuSn varies according to the ratio between Au and Sn. For example, if the ratio between Au and Sn is 1:9 by weight, AuSn has a melting point of 217° C. If the ratio between Au and Sn is 8:2 by weight, AuSn has a melting point of 282° C.

Consequently, there is formed an initial layered substructure 115 including a plurality of stacked substructures 110. FIG. 35 is a perspective view of the initial layered substructure 115. Each of the substructures 110 includes a plurality of preliminary layer portions 10P that are arrayed. Each of the preliminary layer portions 10P is to become any one of the layer portions 10 included in the main part 2M of the main body 2. The substructures 110 are to be cut later in the positions of the boundaries between every adjacent preliminary layer portions 10P. In FIG. 34, the reference symbol 110C indicates the cutting positions in the substructures 110. The initial layered substructure 115 includes a plurality of pre-separation main bodies 2P that are arrayed. The plurality of pre-separation main bodies 2P are to be separated from each other later into individual main bodies 2. In the example shown in FIG. 34, each of the pre-separation main bodies 2P includes four preliminary layer portions 10P. The four preliminary layer portions 10P included in each of the pre-separation main bodies 2P are to become the layer portions 10S1, 10S2, 10S3, and 10S4 in the order from top to bottom.

Now, the process for producing a plurality of main packages 1M from the initial layered substructure 115 will be described in detail with reference to FIG. 36 to FIG. 45.

First, reference is made to FIG. 36 to FIG. 38 to describe the step of forming a plurality of accommodation parts in the initial layered substructure 115. FIG. 36 to FIG. 38 show a step that follows the step shown in FIG. 34. In this step, a plurality of accommodation parts 133 for accommodating a plurality of preliminary wires are formed in the initial layered substructure 115 at positions between two adjacent pre-separation main bodies 2P. FIG. 36 is a plan view showing a part of the initial layered substructure 115. FIG. 37 is a perspective view of a part of the initial layered substructure 115. FIG. 38 is a perspective view showing the plurality of preliminary electrodes 32P of the initial layered substructure 115. For ease of understanding, FIG. 36 and FIG. 37 omit the part of the insulating layer 113 covering the top surfaces of the plurality of preliminary electrodes 32P.

Now, with reference to FIG. 37 and FIG. 38, a detailed description will be given of the plurality of preliminary electrodes 32P and the plurality of accommodation parts 133 of the initial layered substructure 115. The ring-shaped portions 132 of the preliminary electrodes 32P have respective openings 132 a. Four corresponding ring-shaped portions 132 of the four substructures 110 in the initial layered substructure 115 are aligned in a row in the direction in which the four substructures 110 are stacked. Each single accommodation part 133 is formed to penetrate the four openings 132 a of the four ring-shaped portions 132 aligned in a row. Each single accommodation part 133 is a hole penetrating the initial layered substructure 115.

The plurality of accommodation parts 133 are formed in the insulating layers 106A, 106B, and 113 of the four substructures 110. For example, laser processing or reactive ion etching may be employed to form the accommodation parts 133. If the insulating layers 106A, 106B, and 113 are formed of resin, the accommodation parts 133 can be formed easily in a short time by laser processing or reactive ion etching. If the insulating layers 106A, 106B, and 113 are formed of a photosensitive material, photolithography may be employed to form the accommodation parts 133 in the insulating layers 106A, 106B, and 113 of the four substructures 110. In this case, in order to prevent the insulating film 106P from being exposed and developed in the step of forming the plurality of openings 106 a in the insulating film 106P, it is preferred that the plurality of openings 106 a be formed by etching, using an etching mask formed on the insulating film 106P.

Next, with reference to FIG. 39 to FIG. 42, a description will be given of the step of forming the plurality of preliminary wires in the plurality of accommodation parts 133 of the initial layered substructure 115 by plating. FIG. 39 is a cross-sectional view showing a step that follows the step shown in FIG. 36. In this step, first, as shown in FIG. 39, a seed layer 141 for plating is bonded to the bottom surface of the bottom substructure 110 of the initial layered substructure 115. The seed layer 141 is formed of a metal such as copper. The seed layer 141 may be a metal film supported by a plate 142 of resin or the like. Alternatively, the seed layer 141 may be a metal plate, in which case the plate 142 for supporting the seed layer 141 is not needed.

FIG. 40 is a cross-sectional view showing a step that follows the step shown in FIG. 39. In this step, preliminary wires 143 each made of a plating film are respectively formed in the plurality of accommodation parts 133 of the initial layered substructure 115 by electroplating. Here, the seed layer 141 is energized so that plating films grow from the surface of the seed layer 141 to fill the accommodation parts 133. Being provided with the accommodation parts 133 and the preliminary wires 143, the initial layered substructure 115 becomes a layered substructure 120. The layered substructure 120 includes the four stacked substructures 110. The layered substructure 120 includes: the plurality of pre-separation main bodies 2P that are arrayed; the plurality of accommodation parts 133 disposed between two adjacent pre-separation main bodies 2P; and the plurality of preliminary wires 143 accommodated in the plurality of accommodation parts 133.

FIG. 41 is a plan view showing a part of the layered substructure 120. FIG. 42 is a perspective view showing two ring-shaped portions 132 and two preliminary wires 143 in the layered substructure 120 shown in FIG. 41. For ease of understanding, FIG. 41 omits the part of the insulating layer 113 covering the top surfaces of the preliminary electrodes 32P. A single preliminary wire 143 is in contact with four ring-shaped portions 132 aligned in the direction in which the four substructures 110 are stacked. The single preliminary wire 143 is electrically connected to a single second terminal 5.

Next, the step of cutting the layered substructure 120 will be described with reference to FIG. 43 to FIG. 45. FIG. 43 is a cross-sectional view showing a step that follows the step shown in FIG. 40. FIG. 44 is a plan view showing the step of FIG. 43. In this step, as shown in FIG. 43 and FIG. 44, the layered substructure 120 is cut so that the plurality of pre-separation main bodies 2P are separated from each other and the plurality of preliminary wires 143 are cut to form the plurality of wires W, whereby a plurality of main packages 1M are produced. Being separated from each other, the plurality of pre-separation main bodies 2P become individual main bodies 2. In this step, the ring-shaped portions 132 are also cut into bifurcated portions that are located outside the edges of the semiconductor chip 30. The preliminary electrodes 32P become the electrodes 32. FIG. 45 shows two wires W that are formed by the cutting of two preliminary wires 143. Each wire W is electrically connected to four electrodes 32 that are aligned in the direction in which the four layer portions 10 are stacked in the main body 2.

A plurality of main packages 1M are thus produced through the series of steps that have been described with reference to FIG. 22 to FIG. 45. In the present embodiment, a structure composed of a single substructure 110 with a plurality of second additional portion terminals 55 formed on its bottom surface may be fabricated instead of the initial layered substructure 115, and such a structure may be used instead of the initial layered substructure 115 to form a plurality of packages each of which includes only a single layer portion 10, through the series of steps described with reference to FIG. 36 to FIG. 45. It is thereby possible to form a plurality of additional portions 51 such as ones shown in FIG. 10 to FIG. 14.

The method of manufacturing the module 1D according to the present embodiment includes the steps of; fabricating a plurality of main packages 1M; and stacking the plurality of main packages 1M and electrically connecting them to each other.

The method of manufacturing the composite layered chip package 1 according to the present embodiment includes the steps of; fabricating one or more main packages 1M; fabricating the additional portion 51; and stacking the one or more main packages 1M and the additional portion 51 and electrically connecting them to each other.

A description will now be given of first and second modification examples of the method of manufacturing the layered chip package (main package 1M) according to the present embodiment. The first modification example will be described first, with reference to FIG. 46. In the first modification example, seed layers 145 each made of a metal film are formed on the wall faces of the plurality of accommodation parts 133 of the initial layered substructure 115 by electroless plating prior to forming the preliminary wires 143 by electroplating. Subsequently, the preliminary wires 143 each made of a plating film are respectively formed in the plurality of accommodation parts 133 of the initial layered substructure 115 by electroplating. Here, the seed layers 145 are energized so that plating films grow from the surfaces of the seed layers 145 to fill the accommodation parts 133. Being provided with the accommodation parts 133 and the preliminary wires 143, the initial layered substructure 115 becomes the layered substructure 120.

Next, the second modification example will be described with reference to FIG. 47 and FIG. 48. FIG. 47 is a plan view showing a part of the layered substructure 120 of the second modification example. FIG. 48 is a perspective view showing two preliminary wires 143 and a plurality of preliminary electrodes 32P connected thereto in the layered substructure 120 shown in FIG. 47. For ease of understanding, FIG. 47 omits the part of the insulating layer 113 covering the top surfaces of the preliminary electrodes 32P. In the second modification example, the preliminary electrodes 32P are without the ring-shaped portions 132. The preliminary electrodes 32P are exposed in the wall faces of the accommodation parts 133 prior to the formation of the preliminary wires 143 in the initial layered substructure 115. When the preliminary wires 143 are formed in the accommodation parts 133, the preliminary wires 143 are therefore electrically connected to the preliminary electrodes 32P. When the layered substructure 120 is cut subsequently, the plurality of preliminary wires 143 are separated into the plurality of wires W. In the second modification example, two electrodes 32 separated from each other are directly connected to a part of each of the wires WC1 to WC6 that passes through at least one layer portion 10.

As has been described, the main package 1M or the layered chip package according to the present embodiment includes the wiring 3 including the plurality of wires W disposed on at least one of the side surfaces of the main body 2. The main body 2 includes the plurality of first terminals 4 disposed on the top surface 2Ma of the main part 2M, and the plurality of second terminals 5 disposed on the bottom surface 2Mb of the main part 2M.

The wiring 3 includes the plurality of wires W that are electrically connected to the plurality of terminals 4 and 5 and pass through all the plurality of layer portions 10 in the main part 2M. The plurality of wires W include the first-type wires WA1 to WA4 as a plurality of common lines, and the third-type wires WC1 to WC6 as a plurality of layer-dependent lines. The first-type wires WA1 to WA4 have a use common to all the layer portions 10 in the main part 2M. The third-type wires WC1 to WC6 are used by respective different layer portions 10. Each of the plurality of layer portions 10 includes the semiconductor chip 30, the first-type electrodes 32A1 to 32A4 as a plurality of common electrodes, the second-type electrodes 32B1 to 32B6 and the third-type electrodes 32C1 to 32C6 as a plurality of non-contact electrodes, and the fourth-type electrodes 32D1 and 32D2 as selective connection electrodes. The first-type electrodes 32A1 to 32A4 are electrically connected to the first-type wires WA1 to WA4. Each of the fourth-type electrodes 32D1 and 32D2 is selectively electrically connected to only one of the third-type wires WC1 to WC6 that the layer portion 10 uses. The first-type electrodes 32A1 to 32A4 are arranged in the same layout in all the layer portions 10 in the main part 2M. The fourth-type electrodes 32D1 and 32D2 vary in shape depending on which of the third-type wires WC1 to WC6 they are electrically connected to. According to the main package 1M of such a configuration, the semiconductor chip 30 in each layer portion 10 can be electrically connected to the first-type wires WA1 to WA4 which have a use common to all the layer portions 10, and can be selectively electrically connected to at least one of the third-type wires WC1 to WC6 that the layer portion 10 uses.

In the main package 1M according to the present embodiment, both the plurality of first terminals 4 and the plurality of second terminals 5 are electrically connected to the plurality of wires W. With such a main package 1M, it becomes possible to establish electrical connection between two or more main packages 1M by stacking the two or more main packages 1M and electrically connecting the second terminals 5 of the upper one of two vertically adjacent main packages 1M to the first terminals 4 of the lower one. It is thereby possible to form the module 1D according to the present embodiment.

The main package 1M includes a plurality of pairs of the first terminal 4 and the second terminal 5, the first and second terminals 4 and 5 being electrically connected to each other by the wires W. The plurality of pairs include the plurality of non-overlapping terminal pairs. As has been described in detail, according to the present embodiment, when a plurality of main packages 1M having the same configuration are stacked on each other and electrically connected to each other, some of the plurality of signals associated with the semiconductor chips 30 that fall on the same layers in the respective plurality of main packages 1M can be easily made different from one main package 1M to another. According to the present embodiment, it is therefore possible to stack a plurality of main packages 1M of the same configuration and give the main packages 1M respective different functions.

According to the present embodiment, a module 1D including a predetermined number of semiconductor chips 30 is formed by stacking a plurality of main packages 1M. This makes it possible to reduce the number of semiconductor chips 30 to be included in a single main package 1M. It is thereby possible to reduce the possibility for a single main package 1M to include a defective semiconductor chip 30. According to the present embodiment, a module 1D including no defective semiconductor chip 30 can thus be easily formed by stacking main packages 1M that each include only conforming semiconductor chips 30.

According to the present embodiment, it is possible to prevent defective semiconductor chips 30 from being electrically connected to the wiring 3. Furthermore, the additional portion 51 including a conforming semiconductor chip 30 can be electrically connected to the main package 1M according to the present embodiment by using the plurality of terminals 4 or 5 of the main package 1M. This makes it possible to easily implement a package that includes a plurality of semiconductor chips 30 stacked and that is capable of providing, even if it includes a malfunctioning semiconductor chip 30, the same functions as those of a package that includes no malfunctioning semiconductor chip 30.

Specifically, if the main package 1M includes at least one second-type layer portion 10B, at least one additional portion 51 can be added to the main package 1M to form a composite layered chip package 1. According to the present embodiment, even if the main package 1M includes at least one defective semiconductor chip 30, it is thus possible to easily provide a composite layered chip package 1 having the same functions as those of a main package 1M that includes no defective semiconductor chip 30. If at least one of the main packages 1M in the module 1D includes at least one second-type layer portion 10B, at least one additional portion 51 can be added to the plurality of main packages 1M to form a composite layered chip package 1. Consequently, according to the present embodiment, even if at least one of the main packages 1M includes at least one defective semiconductor chip 30, it is possible to easily provide a composite layered chip package 1 having the same functions as those of a module 1D that includes no defective semiconductor chip 30.

According to the present embodiment, even if the main package 1M includes at least one second-type layer portion 10B, it is possible to construct a composite layered chip package 1 having the same functions as those of a main package 1M that includes no defective semiconductor chip 30. Such a composite layered chip package 1 can be constructed by simply adding at least one additional portion 51 to the main package 1M, without disassembling the main package 1M and replacing the second-type layer portion 10B with a first-type layer portion 10A. The present embodiment thus makes it possible to reduce the manufacturing cost of the package that provides the same functions as those for the case where no malfunctioning semiconductor chip 30 is included.

Moreover, the present embodiment facilitates the alignment between every two vertically adjacent main packages 1M when stacking a plurality of main packages 1M. This advantageous effect will now be described with reference to FIG. 49 and FIG. 50. FIG. 49 is a side view showing connecting parts of the terminals of two vertically adjacent main packages 1M. FIG. 50 is an explanatory diagram for explaining misalignment between the terminals of two vertically adjacent main packages 1M.

In the example shown in FIG. 49 and FIG. 50, the terminal 4 includes a conductor pad 4 a of rectangular shape, and an Au layer 4 b formed on the surface of the conductor pad 4 a. The conductor pad 4 a constitutes a part of the electrode 32, and is made of Cu, for example. The terminal 5 includes a conductor pad 5 a of rectangular shape, an underlayer 5 b formed on the surface of the conductor pad 5 a, and a solder layer 5 c formed on the surface of the underlayer 5 b. For example, the conductor pad 5 a is made of Cu, the underlayer 5 b is made of Au, and the solder layer 5 c is made of AuSn. Alternatively, contrary to this example, it is possible that the terminal 4 includes a conductor pad, an underlayer and a solder layer, while the terminal 5 includes a conductor pad and an Au layer. Both of the terminals 4 and 5 may include a solder layer. Here, the lengths of two orthogonal sides of the conductor pad 4 a will be represented by L1 and L2. L1 and L2 are both 40 to 80 μm, for example. The conductor pad 5 a has the same shape as that of the conductor pad 4 a.

In the example shown in FIG. 49, the corresponding terminals 4 and 5 of the two vertically adjacent main packages 1M are electrically connected in the following way. The Au layer 4 b and the solder layer 5 c of the corresponding terminals 4 and 5 are put into contact with each other. By applying heat and pressure, the solder layer 5 c is melted, and then solidified to bond the terminals 4 and 5 to each other.

FIG. 50 shows a state where the terminals 4 and 5 are out of alignment. The state where the terminals 4 and 5 are out of alignment refers to the state where the edges of the conductor pad 4 a and those of the conductor pad 5 a do not coincide in position with each other when viewed in a direction perpendicular to the plane of the conductor pads 4 a and 5 a. In the present embodiment, the corresponding terminals 4 and 5 may be out of alignment as long as the terminals 4 and 5 can be bonded with a sufficiently small resistance at the interface between the terminals 4 and 5. Assuming that L1 and L2 are 30 to 60 μm, the maximum permissible misalignment between the terminals 4 and 5 is smaller than L1 and L2 yet several tens of micrometers.

According to the present embodiment, some misalignment between the terminals 4 and 5 is thus acceptable when stacking a plurality of main packages 1M. This facilitates the alignment between two vertically adjacent main packages 1M. Consequently, according to the present embodiment, it is possible to reduce the manufacturing cost of the module 1D.

For the same reason as with the stacking of a plurality of main packages 1M as described above, the present embodiment facilitates alignment between a main package 1M and an additional portion 51 that are adjacent vertically or alignment between two vertically adjacent additional portions 51. Consequently, according to the present embodiment, it is possible to reduce the manufacturing cost of the composite layered chip package 1 including one or more additional portions 51.

FIG. 51 shows an example of a method of manufacturing a module 1D that includes two stacked main packages 1M. The method shown in FIG. 51 uses a heatproof container 151. The container 151 has an accommodating part 151 a in which a plurality of main packages 1M can be stacked and accommodated. The accommodating part 151 a has such a size that the side surfaces of the main packages 1M accommodated in the accommodating part 151 a and the inner walls of the accommodating part 151 a leave a slight gap therebetween. In the method, two main packages 1M are stacked and accommodated in the accommodating part 151 a of the container 151, and then the container 151 and the two main packages 1M are heated at temperatures at which the solder layer melts (for example, 320° C.). This melts the solder layer, whereby the terminals 4 and 5 of the two vertically adjacent main packages 1M are bonded to each other. According to the method, two main packages 1M are stacked and accommodated in the accommodating part 151 a of the container 151, whereby the two main packages 1M can be easily aligned with each other. This makes it easy to manufacture the module 1D. The method shown in FIG. 51 can also be used in manufacturing a composite layered chip package 1 that includes one or more additional portions 51.

In the present embodiment, defective semiconductor chips 30 are not electrically connected to the wiring 3. The defective semiconductor chips 30 may thus be regarded as a mere insulating layer. Consequently, according to the present embodiment, it is possible to disable the defective semiconductor chips 30 and to prevent the defective semiconductor chips 30 from causing malfunction of the layered chip package.

In the present embodiment, the plurality of first terminals 4 are formed by using the plurality of electrodes 32 of the uppermost layer portion 10 of the main part 2M except the electrodes 32D1 and 32D2. According to the present embodiment, even if the second-type layer portion 10B is the uppermost in a main package 1M, it is still possible to form the plurality of first terminals 4 by using the plurality of electrodes 32 except the electrodes 32D1 and 32D2. This makes it possible to stack an additional portion 51 on the main package 1M and electrically connect the plurality of first terminals 4 of the main package 1M to the plurality of second additional portion terminals 55 of the additional portion 51. In such a case, the plurality of electrodes 32 of the uppermost layer portion 10B other than the electrodes 32D1 and 32D2 do not have the function of electrically connecting the semiconductor chip 30 to the wiring 3, but have an interposer function of electrically connecting a single main package 1M to another main package 1M or to an additional portion 51.

Regardless of whether the uppermost layer portion 10 is the first-type layer portion 10A or second-type layer portion 10B, the electrodes 32B1 to 32B6 and 32C1 to 32C6, which are the non-contact electrodes, do not have the function of electrically connecting the semiconductor chip 30 to the wiring 3, but have an interposer function of electrically connecting a single main package 1M to another main package 1M or to an additional portion 51.

In the present embodiment, each of the third-type wires WC1 to WC6 is greater than each of the first-type wires WA1 to WA4 in maximum width in a cross section orthogonal to the stacking direction. This makes it possible to directly connect two electrodes 32 to the part of each of the wires WC1 to WC6 that passes through at least one layer portion 10.

In the composite layered chip package 1 according to the present embodiment, the additional portion 51 includes at least one additional semiconductor chip 80 and additional portion wiring 53. The additional portion wiring 53 defines electrical connections between the at least one additional semiconductor chip 80 and the plurality of first terminals 4 or second terminals 5 of any of one or more main packages 1M so that the at least one additional semiconductor chip 80 substitutes for a semiconductor chip 30 of at least one second-type layer portion 10B. Consequently, according to the present embodiment, it is possible to easily provide a composite layered chip package 1 having the same functions as those of a main package 1M or a module 1D that includes no defective semiconductor chip 30, regardless of the number and location(s) of the second-type layer portion(s) 10B in one or more main packages 1M. The location(s) of the second-type layer portion(s) 10B in a main package 1M can be known from the location information on non-malfunctioning pre-semiconductor-chip portions 30P and malfunctioning pre-semiconductor-chip portions 30P which was obtained by the wafer sort test.

According to the present embodiment, in a main package 1M including a plurality of stacked semiconductor chips 30, the stacked semiconductor chips 30 are electrically connected to each other by the wiring 3 (the plurality of wires W) disposed on at least one of the side surfaces of the main body 2. The present embodiment therefore eliminates the problems of the wire bonding method, that is, the problem that it is difficult to reduce the distance between the electrodes so as to avoid contact between the wires, and the problem that the high resistances of the wires hamper quick circuit operation.

Furthermore, in the present embodiment, since the plurality of wires W are exposed in at least one of the side surfaces of the main body 2, the plurality of wires W can also be used as terminals of the layered chip package (main package 1M).

Furthermore, in the present embodiment, the plurality of accommodation parts 133 are formed to penetrate a plurality of stacked substructures 110 of the initial layered substructure 115. The preliminary wires 143 are then formed in the accommodation parts 133. The preliminary wires 143 penetrate the stacked substructures 110. Two semiconductor chips 30 vertically adjacent to each other in a layered chip package (main package 1M) are electrically connected to each other by the plurality of wires W that are formed by cutting the preliminary wires 143. To carry out wiring between two vertically adjacent semiconductor chips by the through electrode method, the through electrodes of the two semiconductor chips need to be aligned with each other and electrically connected to each other. In contrast, in the present embodiment, two vertically adjacent semiconductor chips 30 are electrically connected to each other by the plurality of wires W formed as described above. Unlike the through electrode method, it is therefore unnecessary to align and electrically connect through electrodes of the two semiconductor chips with each other. The present embodiment therefore allows increasing the reliability of electrical connection between two vertically adjacent semiconductor chips 30.

The step of fabricating the layered substructure 120 of the present embodiment includes the steps of: fabricating the initial layered substructure 115 that is to later become the layered substructure 120; forming the plurality of accommodation parts 133 in the initial layered substructure 115; and forming the plurality of preliminary wires 143 in the plurality of accommodation parts 133 so that the initial layered substructure 115 becomes the layered substructure 120.

According to the layered substructure 120 or the method of manufacturing the main packages 1M described above, a plurality of main packages 1M each having a plurality of wires W on at least one of the side surfaces of the main body 2 are produced by cutting the layered substructure 120. This involves only a small number of steps. The present embodiment thus makes it possible to mass-produce the main packages 1M at low cost in a short time.

The present embodiment further provides the following advantage in the case where the preliminary electrodes 32P have the ring-shaped portions 132 as shown in FIG. 37 and FIG. 38. That is, in this case, as shown in FIG. 44 and FIG. 45, the plurality of electrodes 32 come in contact with the wires W in large areas in the main body 2 after the layered substructure 120 is cut. This can improve the reliability of the electrical connection between the electrodes 32 and the wires W.

The foregoing method of manufacturing the main packages 1M allows a reduction in the number of steps and consequently allows a reduction in cost for the main packages 1M, as compared with the method of manufacturing a layered chip package disclosed in U.S. Pat. No. 5,953,588.

According to the method of manufacturing the main packages 1M of the present embodiment, the initial layered substructure 115 is fabricated by the method described with reference to FIG. 32 to FIG. 35. This makes it possible to easily reduce the thickness of a plurality of substructures 110 that constitute the initial layered substructure 115, while preventing damage to the substructures 110. The present embodiment thus allows a high-yield manufacture of the main packages 1M that achieve a smaller size and higher integration.

In the present embodiment, the initial layered substructure 115 can be fabricated by a method other than that described with reference to FIG. 32 to FIG. 35. For example, the initial layered substructure 115 may be fabricated by bonding two pre-polishing substructures 109 to each other with their respective first surfaces 109 a arranged to face each other, polishing the two second surfaces 109 b of the two pre-polishing substructures 109 to fabricate a stack including two substructures 110, and laminating a plurality of such stacks. Alternatively, the initial layered substructure 115 may be fabricated by bonding two substructures 110 to each other with their respective second surfaces 110 b arranged to face each other to thereby fabricate a stack including the two substructures 110, and laminating a plurality of such stacks.

In the present embodiment, the preliminary wires 143 can be formed not only by plating, but also by other methods. For example, the preliminary wires 143 may be formed by filling the accommodation parts 133 with a conductive paste that contains silver, copper or other metal powder and a binder, and then heating the conductive paste to decompose the binder and sinter the metal. Alternatively, the preliminary wires 143 may be formed by pressing silver, copper or other metal powder into the accommodation parts 133 and then heating the metal powder to sinter the metal.

Second Embodiment

A second embodiment of the invention will now be described. First, reference is made to FIG. 52 to FIG. 55 to describe the configurations of a layered chip package and a module according to the present embodiment.

FIG. 52 is a perspective view of the module according to the present embodiment. FIG. 53 is a perspective view of the layered chip package according to the present embodiment. FIG. 54 is a perspective view showing the layered chip package of FIG. 53 as viewed from below. FIG. 55 is a perspective view showing a first layer portion of the layered chip package of FIG. 53. The configuration of the module 1D according to the present embodiment and the configuration of the main package 1M or the layered chip package according to the present embodiment are basically the same as those of the first embodiment.

In the present embodiment, the plurality of electrodes 32 in the plurality of layer portions 10 included in the main part 2M of the main body 2 are different from those of the first embodiment in shape. The plurality of electrodes 32 of the present embodiment does not have the bifurcated portions of the plurality of electrodes 32 of the first embodiment shown in FIG. 4 to FIG. 8. In the example shown in FIG. 55, the electrodes 32 of the first layer portion 10S1 have respective ring-shaped portions located closer to the side surface 30 c of the semiconductor chip 30. The ring-shaped portions are of the same shape as the ring-shaped portions 132 of the preliminary electrodes 32P of the first embodiment (see FIG. 30 and FIG. 37). Similarly, the electrodes 32 of the second to fourth layer portions 10S2, 10S3, and 10S4 have respective ring-shaped portions located closer to the side surface 30 c of the semiconductor chip 30. The ring-shaped portions of the plurality of electrodes 32 are not exposed in the side surface 30 c.

The electrodes 32 of the first layer portion 10S1 shown in FIG. 55 are the same as the electrodes 32 of the first layer portion 10S1 of the first embodiment in shape and layout, except the difference between the bifurcated portion and the ring-shaped portion. Although not shown in the drawings, the electrodes 32 of the second to fourth layer portions 10S2, 10S3, and 10S4 are the same as the electrodes 32 of the second to fourth layer portions 10S2, 10S3, and 10S4 of the first embodiment in shape and layout, except the difference between the bifurcated portion and the ring-shaped portion. Four corresponding ring-shaped portions in the four layer portions 10S1, 10S2, 10S3, and 10S4 of the main part 2M are arranged in the same layout as the four corresponding ring-shaped portions 132 of the four substructures 110 in the initial layered substructure 115 of the first embodiment (see FIG. 38).

In the present embodiment, the wiring 3 of the main package 1M includes a plurality of through electrodes T instead of the plurality of wires W. As shown in FIG. 53 and FIG. 54, the plurality of through electrodes T penetrate all the layer portions 10 (10S1, 10S2, 10S3, and 10S4) in the main part 2M. In each layer portion 10, the through electrodes T are electrically connected to the ring-shaped portions of the electrodes 32. The plurality of through electrodes T correspond to the plurality of lines according to the present invention.

The plurality of through electrodes T include first-type through electrodes TA1, TA2, TA3, and TA4, second-type through electrodes TB1, TB2, TB3, TB4, TB5, and TB6, and third-type through electrodes TC1, TC2, TC3, TC4, TC5, and TC6. The first-type through electrodes TA1, TA2, TA3, and TA4 respectively correspond to the first-type wires WA1, WA2, WA3, and WA4 of the first embodiment. The second-type through electrodes TB1, TB2, TB3, TB4, TB5, and TB6 respectively correspond to the second-type wires WB1, WB2, WB3, WB4, WB5, and WB6 of the first embodiment. The third-type through electrodes TC1, TC2, TC3, TC4, TC5, and TC6 respectively correspond to the third-type wires WC1, WC2, WC3, WC4, WC5, and WC6 of the first embodiment.

Each of the third-type through electrodes TC1 to TC6 is greater than each of the first-type through electrodes TA1 to TA4 in maximum width in a cross section orthogonal to the stacking direction. In the present embodiment, when viewed in a cross section orthogonal to the stacking direction, in particular, the width of each of the third-type through electrodes TC1 to TC6 in the direction parallel to the side surface 2 c is greater than that in the direction perpendicular to the side surface 2 c. The width in the direction parallel to the side surface 2 c is therefore the maximum width in the aforementioned cross section. The maximum width of each of the third-type through electrodes TC1 to TC6 in the cross section orthogonal to the stacking direction is equal to or greater than, for example, twice the maximum width of each of the first-type through electrodes TA1 to TA4 in the cross section orthogonal to the stacking direction. The maximum width of each of the second-type through electrodes TB1 to TB6 in the cross section orthogonal to the stacking direction is equal or almost equal to the maximum width of each of the first-type through electrodes TA1 to TA4 in the cross section orthogonal to the stacking direction.

Reference is now made to FIG. 56 to describe the additional portion 51 (51S1, 51S2, 51S3, and 51S4) of the present embodiment. The additional portion 51 of the present embodiment has basically the same configuration as that of the additional portion 51 of the first embodiment. In the present embodiment, the additional portion wiring 53 includes: a plurality of through electrodes AT penetrating the additional semiconductor chip 80; a plurality of first additional portion terminals 54 disposed on the top surface of the additional portion main body 60 and electrically connected to the plurality of through electrodes AT; and a plurality of second additional portion terminals 55 (not shown) disposed on the bottom surface of the additional portion main body 60 and electrically connected to the plurality of through electrodes AT. The plurality of through electrodes AT correspond to the plurality of additional portion wires AW of the first embodiment. The shape and layout of the plurality of first additional portion terminals 54 of the present embodiment are the same as those of the first additional portion terminals 54 of the first embodiment. Although not shown in the drawings, the shape and layout of the plurality of second additional portion terminals 55 of the present embodiment are the same as those of the second additional portion terminals 55 of the first embodiment. The plurality of through electrodes AT electrically connect the first additional portion terminals 54 and the second additional portion terminals 55 that are positioned to overlap each other.

The plurality of electrodes 82 of the present embodiment have their respective ring-shaped portions located closer to at least one of the side surfaces of the additional semiconductor chip 80. The shape and layout of the plurality of electrodes 82 of the first additional portion 51S1 shown in FIG. 56 are the same as those of the plurality of electrodes 32 of the first layer portion 10S1 shown in FIG. 55. Although not shown in the drawings, the shape and layout of the plurality of electrodes 82 of the second to fourth additional portions 51S2, 51S3, and 51S4 are the same as those of the plurality of electrodes 32 of the second to fourth layer portions 10S2, 10S3, and 10S4, respectively. In the present embodiment, the through electrodes AT are electrically connected to the ring-shaped portions of the plurality of electrodes 82.

The plurality of through electrodes AT include through electrodes ATA1 to ATA4, ATB1 to ATB6, and ATC1 to ATC6 that correspond to the through electrodes TA1 to TA4, TB1 to TB6, and TC1 to TC6, respectively. The through electrodes ATA1 to ATA4, ATB1 to ATB6, and ATC1 to ATC6 correspond to the wires AWA1 to AWA4, AWB1 to AWB6, and AWC1 to AWC6 of the first embodiment, respectively.

Now, a description will be given of the method of manufacturing the layered chip package (main package 1M) according to the present embodiment. The method of manufacturing the layered chip package according to the present embodiment includes the step of fabricating a layered substructure and the step of cutting the layered substructure, like the first embodiment. The step of fabricating the layered substructure of the present embodiment is basically the same as the step of the first embodiment shown in FIG. 22 to FIG. 42. In the present embodiment, a plurality of grooves that correspond to the plurality of through electrodes T to be formed later are formed by etching in the step shown in FIG. 25 and FIG. 26, instead of the grooves 104. The plurality of grooves open in the first surface 101 a of the pre-substructure wafer 101. The planar shape (shape as viewed from above) of the grooves is rectangular, for example. The grooves are formed such that their bottoms do not reach the second surface 101 b of the pre-substructure wafer 101. In a cross section parallel to the first surface 101 a of the pre-substructure wafer 101, the grooves are larger in size than the through electrodes T to be formed later.

In the present embodiment, the plurality of electrodes 32 of the embodiment are formed in the step shown in FIG. 29 and FIG. 30, instead of the plurality of preliminary electrodes 32P. The ring-shaped portions of the plurality of electrodes 32 are located above the aforementioned grooves. In the step shown in FIG. 32, the second surface 109 b of the first pre-polishing substructure 109 is polished until the aforementioned grooves are exposed. The aforementioned grooves thereby become a plurality of insulator fill holes. The insulator fill holes are filled with an insulator that constitutes part of the insulating layer 106A or 106B.

According to the present embodiment, in the step shown in FIG. 36 to FIG. 38, a plurality of accommodation parts 133 are formed in each of the plurality of pre-separation main bodies 2P included in the initial layered substructure 115. The plurality of accommodation parts 133 of the present embodiment are intended to accommodate the plurality of through electrodes T. The plurality of accommodation parts 133 are each formed to penetrate the insulator in the insulator fill holes of the four substructures 110. The accommodation parts 133 are the same in diameter as the openings of the ring-shaped portions of the electrodes 32, and are smaller in diameter than the insulator fill holes. Therefore, when the accommodation parts 133 have been formed, the inner walls of the ring-shaped portions of the electrodes 32 to define the openings are exposed in the wall faces of the accommodation parts 133. Further, in the insulator fill holes, the insulator remains around the accommodation parts 133.

In the present embodiment, the plurality of through electrodes T are formed in the step shown in FIG. 39 to FIG. 42, instead of the plurality of preliminary wires 143. The method of forming the plurality of through electrodes T is the same as the method of forming the plurality of preliminary wires 143 of the first embodiment. The layered substructure of the present embodiment includes a plurality of pre-separation main bodies 2P that are arrayed, a plurality of accommodation parts 133 formed in the plurality of pre-separation main bodies 2P, and a plurality of through electrodes T accommodated in the plurality of accommodation parts 133.

In the step of cutting the layered substructure of the present embodiment, the layered substructure is cut to separate the plurality of pre-separation main bodies 2P from each other so that a plurality of main packages 1M are formed. Being separated from each other, the plurality of pre-separation main bodies 2P become individual main bodies 2. In the present embodiment, the plurality of pre-semiconductor-chip portions 30P are separated from each other into individual semiconductor chips 30 in the step of cutting the layered substructure. The through electrodes T are electrically connected to four electrodes 32 that align in the direction in which the four layer portions 10 are stacked in the main body 2.

The remainder of configuration, function and effects of the present embodiment are similar to those of the first embodiment.

Third Embodiment

A third embodiment of the invention will now be described. First, reference is made to FIG. 57 to FIG. 60 to describe the configuration of a layered chip package according to the present embodiment. FIG. 57 is a perspective view of the layered chip package according to the present embodiment. FIG. 58 is a perspective view showing the layered chip package of FIG. 57 as viewed from below. FIG. 59 is a plan view showing a first layer portion of the layered chip package of FIG. 57. FIG. 60 is a perspective view showing the first layer portion of the layered chip package of FIG. 57.

As shown in FIG. 57 and FIG. 58, the main package 1M or the layered chip package according to the present embodiment includes a main body 2, and wiring 3 including a plurality of wires W disposed on at least one side surface of the main body 2, as does the main package 1M of the first embodiment. The main body 2 has a top surface 2 a, a bottom surface 2 b, and four side surfaces 2 c, 2 d, 2 e, and 2 f. In the example shown in FIG. 57 and FIG. 58, the plurality of wires W are disposed only on the side surface 2 c. The main body 2 includes a main part 2M having a top surface 2Ma and a bottom surface 2Mb. The main part 2M includes a plurality of layer portions 10 that are stacked. The plurality of wires W pass through all the plurality of layer portions 10. The plurality of wires W correspond to the plurality of lines according to the invention.

As one example, FIG. 57 and FIG. 58 show a case where the main part 2M includes eight layer portions 10. However, the number of the layer portions 10 to be included in the main part 2M is not limited to eight, and may be any plural number. Hereinafter, the eight layer portions 10 included in the main part 2M shown in FIG. 57 and FIG. 58 will be referred to as first to eighth layer portions in order from the top. The first to eighth layer portions will be designated by the symbols L11, L12, L13, L14, L15, L16, L17, and L18, respectively.

As in the first embodiment, the main body 2 further includes a plurality of first terminals 4 that are disposed on the top surface 2Ma of the main part 2M and electrically connected to the plurality of wires W, and a plurality of second terminals 5 that are disposed on the bottom surface 2Mb of the main part 2M and electrically connected to the plurality of wires W. The main body 2 further includes top wiring 4W, bottom wiring 5W, and an insulating layer 8.

The plurality of second terminals 5 are positioned to overlap the plurality of first terminals 4 as viewed in a direction perpendicular to the top surface 2 a of the main body 2. When two main packages 1M are vertically arranged, the plurality of second terminals 5 of the upper one of the main packages 1M are therefore opposed to the plurality of first terminals 4 of the lower one. In the present embodiment, when two or more main packages 1M are stacked on each other, the plurality of second terminals 5 of the upper one of two vertically adjacent main packages 1M are electrically connected to the plurality of first terminals 4 of the lower one.

The configuration of the layer portions 10 is the same as that in the first embodiment except the configuration of the plurality of electrodes 32. A detailed description will now be given of the plurality of terminals 4 and 5, the plurality of wires W, and the plurality of electrodes 32 of the present embodiment.

In the present embodiment, as in the first embodiment, the plurality of second terminals 5 are electrically connected to respective corresponding ones of the plurality of first terminals 4 via the wires W to constitute a plurality of pairs of the first and second terminals 4 and 5. The first terminal 4 and the second terminal 5 in each of the pairs are electrically connected to each other. In the present embodiment, all of the plurality of pairs are overlapping terminal pairs each of which consists of a first terminal 4 and a second terminal 5 that are positioned to overlap each other as viewed in the direction perpendicular to the top surface 2 a of the main body 2.

In the example shown in FIG. 57 and FIG. 58, the plurality of first terminals 4 include first-type terminals 4A1, 4A2, 4A3, and 4A4, second-type terminals 4E1, 4E2, 4E3, and 4E4, and third-type terminals 4F1, 4F2, 4F3, 4F4, 4F5, 4F6, 4F7, and 4F8. Similarly, the plurality of second terminals 5 include first-type terminals 5A1, 5A2, 5A3, and 5A4, second-type terminals 5E1, 5E2, 5E3, and 5E4, and third-type terminals 5F1, 5F2, 5F3, 5F4, 5F5, 5F6, 5F7, and 5F8. The terminals 5A1 to 5A4 are paired with the terminals 4A1 to 4A4, respectively. The terminals 5E1 to 5E4 are paired with the terminals 4E1 to 4E4, respectively. The terminals 5F1 to 5F8 are paired with the terminals 4F1 to 4F8, respectively.

The plurality of wires W include first-type wires WA1, WA2, WA3, and WA4, second-type wires WE1, WE2, WE3, and WE4, and third-type wires WF1, WF2, WF3, WF4, WF5, WF6, WF7, and WF8. The first-type wires WA1, WA2, WA3, and WA4 electrically connect the terminal pairs (4A1, 5A1), (4A2, 5A2), (4A3, 5A3), and (4A4, 5A4), respectively. The plurality of first-type wires WA1 to WA4 have a use common to all of the layer portions 10 in the main part 2M. The plurality of first-type wires WA1 to WA4 correspond to the plurality of common lines according to the present invention.

The second-type wires WE1, WE2, WE3, and WE4 electrically connect the terminal pairs (4E1, 5E1), (4E2, 5E2), (4E3, 5E3), and (4E4, 5E4), respectively. The third-type wires WF1, WF2, WF3, WF4, WF5, WF6, WF7, and WF8 electrically connect the terminal pairs (4F1, 5F1), (4F2, 5F2), (4F3, 5F3), (4F4, 5F4), (4F5, 5F5), (4F6, 5F6), (4F7, 5F7), and (4F8, 5F8), respectively.

The second-type wires WE1 to WE4 and the third-type wires WF1 to WF8 are used for electrical connection to the semiconductor chip 30 of at least one of the plurality of layer portions 10 in the main part 2M. As described below, the wires WE1 to WE4 and WF1 to WF8 are used by respective different layer portions 10. The wire WE1 is used by the layer portions L11 and L12. The wire WE2 is used by the layer portions L13 and L14. The wire WE3 is used by the layer portions L15 and L16. The wire WE4 is used by the layer portions L17 and L18. The wires WF1 to WF8 are used by the layer portions L11 to L18, respectively. The wires WE1 to WE4 and WF1 to WF8 correspond to the plurality of layer-dependent lines according to the present invention.

Each of the wires WE1 to WE4 and WF1 to WF8 is greater than each of the wires WA1 to WA4 in maximum width in a cross section orthogonal to the stacking direction. In the present embodiment, when viewed in a cross section orthogonal to the stacking direction, in particular, the width of each of the wires WE1 to WE4 and WF1 to WF8 in the direction parallel to the side surface 2 c is greater than that in the direction perpendicular to the side surface 2 c. The width in the direction parallel to the side surface 2 c is therefore the maximum width in the aforementioned cross section. The maximum width of each of the wires WE1 to WE4 and WF1 to WF8 in the cross section orthogonal to the stacking direction is equal to or greater than, for example, twice the maximum width of each of the wires WA1 to WA4 in the cross section orthogonal to the stacking direction.

The plurality of electrodes 32 include the following first- to fourth-type electrodes. The first-type electrodes 32A1, 32A2, 32A3, and 32A4 are located at positions corresponding to the terminals 4A1, 4A2, 4A3, and 4A4, respectively, as viewed in the direction perpendicular to the top surface 2 a of the main body 2. The first-type electrodes 32A1, 32A2, 32A3, and 32A4 are directly connected to the first-type wires WA1, WA2, WA3, and WA4, respectively, and are thereby electrically connected to the first-type wires WA1, WA2, WA3, and WA4, respectively. In at least one of the plurality of layer portions 10 in the main part 2M, the first-type electrodes 32A1 to 32A4 are in contact with and electrically connected to the semiconductor chip 30. In FIG. 59, the dashed squares in the electrodes 32A1 to 32A4 represent the areas where the electrodes 32A1 to 32A4 make contact with the semiconductor chip 30. The first-type electrodes 32A1 to 32A4 correspond to the plurality of common electrodes according to the present invention.

The second-type electrodes 32E1 to 32E4 are located at positions corresponding to the terminals 4E1 to 4E4, respectively, as viewed in the direction perpendicular to the top surface 2 a of the main body 2. The second-type electrodes 32E1 to 32E4 are directly connected to the second-type wires WE1 to WE4, respectively, and are thereby electrically connected to the wires WE1 to WE4, respectively.

The third-type electrodes 32F1 to 32F8 are located at positions corresponding to the terminals 4F1 to 4F8, respectively, as viewed in the direction perpendicular to the top surface 2 a of the main body 2. The third-type electrodes 32F1 to 32F8 are directly connected to the third-type wires WF1 to WF8, respectively, and are thereby electrically connected to the wires WF1 to WF8, respectively. None of the second-type electrodes 32E1 to 32E4 and the third-type electrodes 32F1 to 32F8 are in contact with the semiconductor chip 30. The second-type electrodes 32E1 to 32E4 and the third-type electrodes 32F1 to 32F8 correspond to the plurality of non-contact electrodes according to the present invention. Each of the first- to third-type electrodes has a bifurcated portion which holds a wire to be connected.

The fourth-type electrodes 32D1 and 32D2 are ones with which different signals are associated from one layer portion 10 to another. Each of the fourth-type electrodes 32D1 and 32D2 corresponds to the selective connection electrode according to the present invention. Each of the fourth-type electrodes 32D1 and 32D2 is selectively electrically connected to only one of the wires WE1 to WE4 and WF1 to WF8 that the layer portion 10 uses, as described below.

In the layer portion L11, the electrodes 32D1 and 32D2 are directly connected to the wires WE1 and WF1, respectively, and are thereby selectively electrically connected to the wires WE1 and WF1, respectively. In the layer portion L12, the electrodes 32D1 and 32D2 are directly connected to the wires WE1 and WF2, respectively, and are thereby selectively electrically connected to the wires WE1 and WF2, respectively.

In the layer portion L13, the electrodes 32D1 and 32D2 are directly connected to the wires WE2 and WF3, respectively, and are thereby selectively electrically connected to the wires WE2 and WF3, respectively. In the layer portion L14, the electrodes 32D1 and 32D2 are directly connected to the wires WE2 and WF4, respectively, and are thereby selectively electrically connected to the wires WE2 and WF4, respectively.

In the layer portion L15, the electrodes 32D1 and 32D2 are directly connected to the wires WE3 and WF5, respectively, and are thereby selectively electrically connected to the wires WE3 and WF5, respectively. In the layer portion L16, the electrodes 32D1 and 32D2 are directly connected to the wires WE3 and WF6, respectively, and are thereby selectively electrically connected to the wires WE3 and WF6, respectively.

In the layer portion L17, the electrodes 32D1 and 32D2 are directly connected to the wires WE4 and WF7, respectively, and are thereby selectively electrically connected to the wires WE4 and WF7, respectively. In the layer portion L18, the electrodes 32D1 and 32D2 are directly connected to the wires WE4 and WF8, respectively, and are thereby selectively electrically connected to the wires WE4 and WF8, respectively.

Two electrodes 32 are directly connected to a part of each of the wires WE1 to WE4 and WF1 to WF8 that passes through at least one layer portion 10. To enable this, as previously mentioned, each of the wires WE1 to WE4 and WF1 to WF8 is configured to be greater than each of the wires WA1 to WA4 in maximum width in a cross section orthogonal to the stacking direction.

In at least one of the plurality of layer portions 10 in the main part 2M, the fourth-type electrodes 32D1 and 32D2 are in contact with and electrically connected to the semiconductor chip 30. In FIG. 59, the dashed squares in the electrodes 32D1 and 32D2 represent the areas where the electrodes 32D1 and 32D2 make contact with the semiconductor chip 30.

The first- to third-type electrodes 32A1 to 32A4, 32E1 to 32E4, and 32F1 to 32F8 are arranged in the same layout in all the layer portions 10 in the main part 2M. The fourth-type electrodes 32D1 and 32D2 vary in shape depending on which of the wires WE1 to WE4 and WF1 to WF8 they are electrically connected to. In FIG. 59, the shapes of the electrodes 32D1 and 32D2 in the layer portions 10 other than the layer portion L11 are shown by chain double-dashed lines.

The main package 1M including the eight layer portions 10 according to the present embodiment has the same functions as those of a module 1D that is composed of the main packages 1A and 1B of the first embodiment each including four layer portions. When the memory device shown in FIG. 19 is constructed by using the main package 1M according to the present embodiment, the memory chips MC1 to MC8 are implemented by the semiconductor chips 30 in the respective layer portions L11 to L18. The chip enable signals CE1 to CE4 are supplied to the terminals 4E1 to 4E4 or the terminals 5E1 to 5E4, respectively. The ready/busy signals of the memory chips MC1 to MC8 are output from the terminals 4F1 to 4F8 or the terminals 5F1 to 5F8, respectively.

In the present embodiment, as in the first embodiment, if the main package 1M includes at least one second-type layer portion 10B, a composite layered chip package 1 can be constructed by adding an additional portion(s) to the main package 1M.

Reference is now made to FIG. 61 to describe an additional portion of the present embodiment. FIG. 61 is a perspective view showing a first additional portion 51L1 having the same configuration and functions as those of the first layer portion L11. The additional portion 51L1 is to substitute for the layer portion L11 when the layer portion L11 is the second-type layer portion 10B.

The additional portion 51L1 includes an additional portion main body 60 and additional portion wiring 53, as does the additional portion 51 of the first embodiment. The additional portion main body 60 includes an additional semiconductor chip 80. The additional semiconductor chip 80 has the same configuration as that of a conforming semiconductor chip 30.

The additional portion wiring 53 includes: a plurality of additional portion wires AW that are disposed on at least one of the side surfaces of the additional portion main body 60; a plurality of first additional portion terminals 54 that are disposed on the top surface of the additional portion main body 60 and electrically connected to the plurality of additional portion wires AW; and a plurality of second additional portion terminals 55 (not shown) that are disposed on the bottom surface of the additional portion main body 60 and electrically connected to the plurality of additional portion wires AW. The shape and layout of the plurality of first additional portion terminals 54 are the same as those of the plurality of first terminals 4 shown in FIG. 57. The shape and layout of the plurality of second additional portion terminals 55 are the same as those of the plurality of second terminals 5 shown in FIG. 58.

The additional portion main body 60 further includes an insulating portion 81 that covers the top and bottom surfaces and at least one of the four side surfaces of the additional semiconductor chip 80, and a plurality of electrodes 82 that are electrically connected to the plurality of additional portion wires AW. The shape and layout of the plurality of electrodes 82 of the additional portion 51L1 are the same as those of the plurality of electrodes 32 of the layer portion L11 shown in FIG. 60.

The plurality of electrodes 82 include electrodes 82D1 and 82D2 corresponding to the electrodes 32D1 and 32D2, and other plurality of electrodes. The plurality of first additional portion terminals 54 are formed by using the plurality of electrodes 82 except the electrodes 82D1 and 82D2. The electrodes 82 corresponding to the electrodes 32A1 to 32A4, and the electrodes 82D1 and 82D2 are in contact with and electrically connected to the additional semiconductor chip 80.

The plurality of additional portion wires AW include wires AWA1 to AWA4, AWE1 to AWE4, and AWF1 to AWF8 that correspond to the wires WA1 to WA4, WE1 to WE4, and WF1 to WF8, respectively.

In the additional portion 51L1, as in the layer portion L11, the electrode 82D1 is electrically connected to the wire AWE1 to which an electrode corresponding to the electrode 32E1 is electrically connected. In the additional portion 51L1, the electrode 82D2 is electrically connected to the wire AWF1 to which an electrode corresponding to the electrode 32F1 is electrically connected.

Although not shown in the drawings, in the present embodiment, there are also prepared second to eighth additional portions that have the same configuration and functions as those of the second to eighth layer portions L12 to L18, respectively. The second to eighth additional portions are to substitute for the layer portions L12 to L18 when the layer portions L12 to L18 are second-type layer portions 10B. The shape and layout of the plurality of electrodes 82 of the second to eighth additional portions are the same as those of the plurality of electrodes 32 of the second to eighth layer portions L12 to L18. In other respects, the second to eighth additional portions have the same configuration as that of the first additional portion 51L1.

According to the present embodiment, if the layer portion L11 of the main package 1M is the second-type layer portion 10B, the first additional portion 51L1 can be provided on top or bottom of the main package 1M to form a composite layered chip package 1. Similarly, if any one of the second to eighth layer portions L12 to L18 is the second-type layer portion 10B, one of the second and eighth additional portions can be provided on top or bottom of the main package 1M to form a composite layered chip package 1. If the main package 1M includes two or more second-type layer portions 10B, two or more additional portions corresponding to those layer portions can be provided on top or bottom of the main package 1M to form a composite layered chip package 1.

The remainder of configuration, function and effects of the present embodiment are similar to those of the first embodiment.

Fourth Embodiment

A fourth embodiment of the invention will now be described. First, reference is made to FIG. 62 to FIG. 64 to describe the configuration of a layered chip package according to the present embodiment. FIG. 62 is a perspective view of the layered chip package according to the present embodiment. FIG. 63 is a perspective view showing the layered chip package of FIG. 62 as viewed from below. FIG. 64 is a perspective view showing a first layer portion of the layered chip package of FIG. 62.

In the main package 1M or the layered chip package according to the present embodiment, the plurality of electrodes 32 of the plurality of layer portions 10 included in the main part 2M of the main body 2 are different in shape as those of the third embodiment. The plurality of electrodes 32 of the present embodiment do not have the bifurcated portions. In the example shown in FIG. 64, the electrodes 32 of the first layer portion L11 have respective ring-shaped portions located closer to the side surface 30 c of the semiconductor chip 30. The ring-shaped portions are of the same shape as those of the second embodiment. Similarly, the electrodes 32 of the second to eighth layer portions L12 to L18 have respective ring-shaped portions located closer to the side surface 30 c of the semiconductor chip 30. The ring-shaped portions of the plurality of electrodes 32 are not exposed in the side surface 30 c.

The electrodes 32 of the first layer portion L11 shown in FIG. 64 are the same as the electrodes 32 of the first layer portion L11 of the third embodiment in shape and layout, except the difference between the bifurcated portion and the ring-shaped portion. Although not shown in the drawings, the electrodes 32 of the second to eighth layer portions L12 to L18 are the same as the electrodes 32 of the second to eighth layer portions L12 to L18 of the third embodiment in shape and layout, except the difference between the bifurcated portion and the ring-shaped portion. Eight corresponding ring-shaped portions in the eight layer portions L12 to L18 of the main part 2M are aligned in a row in the stacking direction.

In the present embodiment, the wiring 3 of the main package 1M includes a plurality of through electrodes T instead of the plurality of wires W. As shown in FIG. 62 and FIG. 63, the plurality of through electrodes T penetrate all the layer portions 10 (L11 to L18) in the main part 2M. In each layer portion 10, the through electrodes T are electrically connected to the ring-shaped portions of the electrodes 32. The plurality of through electrodes T correspond to the plurality of lines according to the present invention.

The plurality of through electrodes T include first-type through electrodes TA1, TA2, TA3, and TA4, second-type through electrodes TE1, TE2, TE3, and TE4, and third-type through electrodes TF1, TF2, TF3, TF4, TF5, TF6, TF7, and TF8. The first-type through electrodes TA1, TA2, TA3, and TA4 respectively correspond to the first-type wires WA1, WA2, WA3, and WA4 of the third embodiment. The second-type through electrodes TE1, TE2, TE3, and TE4 respectively correspond to the second-type wires WE1, WE2, WE3, and WE4 of the third embodiment. The third-type through electrodes TF1, TF2, TF3, TF4, TF5, TF6, TF7, and TF8 respectively correspond to the third-type wires WF1, WF2, WF3, WF4, WF5, WF6, WF7, and WF8 of the third embodiment.

Each of the through electrodes TE1 to TE4 and TF1 to TF8 is greater than each of the through electrodes TA1 to TA4 in maximum width in a cross section orthogonal to the stacking direction. In the present embodiment, when viewed in a cross section orthogonal to the stacking direction, in particular, the width of each of the through electrodes TE1 to TE4 and TF1 to TF8 in the direction parallel to the side surface 2 c is greater than that in the direction perpendicular to the side surface 2 c. The width in the direction parallel to the side surface 2 c is therefore the maximum width in the aforementioned cross section. The maximum width of each of the through electrodes TE1 to TE4 and TF1 to TF8 in the cross section orthogonal to the stacking direction is equal to or greater than, for example, twice the maximum width of each of the through electrodes TA1 to TA4 in the cross section orthogonal to the stacking direction.

Reference is now made to FIG. 65 to describe an additional portion of the present embodiment. FIG. 65 is a perspective view showing a first additional portion 51L1 having the same configuration and functions as those of the first layer portion L11. The additional portion of the present embodiment has basically the same configuration as that of the additional portion of the third embodiment. In the present embodiment, the additional portion wiring 53 includes: a plurality of through electrodes AT penetrating the additional semiconductor chip 80; a plurality of first additional portion terminals 54 disposed on the top surface of the additional portion main body 60 and electrically connected to the plurality of through electrodes AT; and a plurality of second additional portion terminals 55 (not shown) disposed on the bottom surface of the additional portion main body 60 and electrically connected to the plurality of through electrodes AT. The plurality of through electrodes AT correspond to the plurality of additional portion wires AW of the third embodiment. The shape and layout of the plurality of first additional portion terminals 54 of the present embodiment are the same as those of the first additional portion terminals 54 of the third embodiment. Although not shown in the drawings, the shape and layout of the plurality of second additional portion terminals 55 of the present embodiment are the same as those of the second additional portion terminals 55 of the third embodiment. The plurality of through electrodes AT electrically connect the first additional portion terminals 54 and the second additional portion terminals 55 that are positioned to overlap each other.

The plurality of electrodes 82 of the present embodiment have their respective ring-shaped portions located closer to at least one of the side surfaces of the additional semiconductor chip 80. The shape and layout of the plurality of electrodes 82 of the first additional portion 51L1 shown in FIG. 65 are the same as those of the plurality of electrodes 32 of the first layer portion L11 shown in FIG. 64. Although not shown in the drawings, the shape and layout of the plurality of electrodes 82 of the second to eighth additional portions are the same as those of the plurality of electrodes 32 of the second to eighth layer portions L12 to L18, respectively. In the present embodiment, the through electrodes AT are electrically connected to the ring-shaped portions of the plurality of electrodes 82.

The plurality of through electrodes AT include through electrodes ATA1 to ATA4, ATE1 to ATE4, and ATF1 to ATF8 that correspond to the through electrodes TA1 to TA4, TE1 to TE4, and TF1 to TF8, respectively. The through electrodes ATA1 to ATA4, ATE1 to ATE4, and ATF1 to ATF8 correspond to the wires AWA1 to AWA4, AWE1 to AWE4, and AWF1 to AWF8 of the third embodiment, respectively.

The method of manufacturing the main package 1M according to the present embodiment is the same as that of the second embodiment. The remainder of configuration, function and effects of the present embodiment are similar to those of the third embodiment.

The present invention is not limited to the foregoing embodiments, and various modifications may be made thereto. For example, the first embodiment has dealt with the case where the preliminary wires are cut into the wires W of a single main body 2 in the step of cutting the layered substructure. In the present invention, however, the preliminary wires may be configured to be split into two sets of wires W of two different main bodies 2 in the step of cutting the layered substructure.

In the first and second embodiments, the module 1D having a stack of two main packages 1M has been described as an example of a module that includes a plurality of main packages 1M. In the present invention, however, the module may be composed of three or more main packages 1M. In such a case, the module includes a stack of the three or more main packages 1M, where every two vertically adjacent main packages 1M are electrically connected to each other.

It is apparent that the present invention can be carried out in various forms and modifications in the light of the foregoing descriptions. Accordingly, within the scope of the following claims and equivalents thereof, the present invention can be carried out in forms other than the foregoing most preferred embodiments. 

1. A layered chip package comprising a main body and wiring, wherein: the main body includes a main part and a plurality of terminals, the main part having a top surface and a bottom surface and including a plurality of layer portions that are stacked, the plurality of terminals being disposed on at least one of the top and bottom surfaces of the main part; the wiring includes a plurality of lines that are electrically connected to the plurality of terminals and pass through all the plurality of layer portions; the plurality of lines include a plurality of common lines that have a use common to all the layer portions in the main part, and a plurality of layer-dependent lines that are used by respective different layer portions; each of the plurality of layer portions includes: a semiconductor chip; a plurality of common electrodes electrically connected to the plurality of common lines; a plurality of non-contact electrodes that are electrically connected to the plurality of layer-dependent lines and are not in contact with the semiconductor chip; and a selective connection electrode selectively electrically connected to only the layer-dependent line that the layer portion uses among the plurality of layer-dependent lines; in at least one of the plurality of layer portions, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line; the plurality of terminals include a plurality of first terminals formed by using the plurality of common electrodes and the plurality of non-contact electrodes of one of the plurality of layer portions that is located at one end of the main part in a direction in which the plurality of layer portions are stacked; and each of the plurality of layer-dependent lines is greater than each of the plurality of common lines in maximum width in a cross section orthogonal to the direction in which the plurality of layer portions are stacked.
 2. The layered chip package according to claim 1, wherein the plurality of first terminals are disposed on the top surface of the main part.
 3. The layered chip package according to claim 2, wherein the plurality of terminals further include a plurality of second terminals that are disposed on the bottom surface of the main part and electrically connected to the plurality of lines.
 4. The layered chip package according to claim 1, wherein the main body has a top surface, a bottom surface, and four side surfaces, and the plurality of lines are disposed on at least one of the side surfaces of the main body.
 5. The layered chip package according to claim 1, wherein the plurality of lines penetrate all the layer portions in the main part.
 6. The layered chip package according to claim 1, wherein the semiconductor chip includes a plurality of memory cells.
 7. The layered chip package according to claim 1, wherein: the plurality of layer portions include at least one first-type layer portion and at least one second-type layer portion; in the first-type layer portion, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line; and in the second-type layer portion, the plurality of common electrodes and the selective connection electrode are not electrically connected to the semiconductor chip, and the semiconductor chip is thereby not electrically connected to the plurality of common lines and the layer-dependent line.
 8. The layered chip package according to claim 7, wherein the semiconductor chip of the first-type layer portion is non-malfunctioning, whereas the semiconductor chip of the second-type layer portion is malfunctioning.
 9. A method of manufacturing a plurality of layered chip packages of claim 1, comprising the steps of: fabricating a layered substructure by stacking a plurality of substructures each of which includes a plurality of preliminary layer portions that are arrayed, each of the preliminary layer portions being intended to become one of the layer portions included in the main part, the plurality of substructures being intended to be cut later at positions of boundaries between every adjacent ones of the preliminary layer portions; and cutting the layered substructure so that the plurality of layered chip packages are produced.
 10. The method of manufacturing the layered chip packages according to claim 9, wherein: the plurality of layer portions include at least one first-type layer portion and at least one second-type layer portion; in the first-type layer portion, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line; and in the second-type layer portion, the plurality of common electrodes and the selective connection electrode are not electrically connected to the semiconductor chip, and the semiconductor chip is thereby not electrically connected to the plurality of common lines and the layer-dependent line.
 11. The method of manufacturing the layered chip packages according to claim 10, wherein the semiconductor chip of the first-type layer portion is non-malfunctioning, whereas the semiconductor chip of the second-type layer portion is malfunctioning.
 12. The method of manufacturing the layered chip packages according to claim 11, wherein the step of fabricating the layered substructure includes, as a series of steps for forming each of the substructures, the steps of: fabricating a pre-substructure wafer including a plurality of pre-semiconductor-chip portions that are arrayed, the plurality of pre-semiconductor-chip portions being intended to become the semiconductor chips, respectively; distinguishing the plurality of pre-semiconductor-chip portions included in the pre-substructure wafer into non-malfunctioning pre-semiconductor-chip portions and malfunctioning pre-semiconductor-chip portions; and forming the plurality of common electrodes and the selective connection electrode so that the plurality of common electrodes and the selective connection electrode are electrically connected to the non-malfunctioning pre-semiconductor-chip portions while the plurality of common electrodes and the selective connection electrode are not electrically connected to the malfunctioning pre-semiconductor-chip portions, whereby the pre-substructure wafer is made into the substructure.
 13. A composite layered chip package comprising a main package and an additional portion that are stacked on each other and electrically connected to each other, wherein: the main package includes a main body and wiring; the main body includes a main part and a plurality of terminals, the main part having a top surface and a bottom surface and including a plurality of layer portions that are stacked, the plurality of terminals being disposed on at least one of the top and bottom surfaces of the main part; the wiring includes a plurality of lines that are electrically connected to the plurality of terminals and pass through all the plurality of layer portions; the plurality of lines include a plurality of common lines that have a use common to all the layer portions in the main part, and a plurality of layer-dependent lines that are used by respective different layer portions; each of the plurality of layer portions includes: a semiconductor chip; a plurality of common electrodes electrically connected to the plurality of common lines; a plurality of non-contact electrodes that are electrically connected to the plurality of layer-dependent lines and are not in contact with the semiconductor chip; and a selective connection electrode selectively electrically connected to only the layer-dependent line that the layer portion uses among the plurality of layer-dependent lines; the plurality of terminals include a plurality of first terminals formed by using the plurality of common electrodes and the plurality of non-contact electrodes of one of the plurality of layer portions that is located at one end of the main part in a direction in which the plurality of layer portions are stacked; each of the plurality of layer-dependent lines is greater than each of the plurality of common lines in maximum width in a cross section orthogonal to the direction in which the plurality of layer portions are stacked; the plurality of layer portions include at least one first-type layer portion and at least one second-type layer portion; the semiconductor chip of the first-type layer portion is non-malfunctioning, and, in the first-type layer portion, the plurality of common electrodes and the selective connection electrode are electrically connected to the semiconductor chip, and the semiconductor chip is thereby electrically connected to the plurality of common lines and the layer-dependent line; the semiconductor chip of the second-type layer portion is malfunctioning, and, in the second-type layer portion, the plurality of common electrodes and the selective connection electrode are not electrically connected to the semiconductor chip, and the semiconductor chip is thereby not electrically connected to the plurality of common lines and the layer-dependent line; and the additional portion includes: at least one additional semiconductor chip; and additional portion wiring that defines electrical connections between the at least one additional semiconductor chip and the plurality of terminals of the main package so that the at least one additional semiconductor chip substitutes for the semiconductor chip of the at least one second-type layer portion.
 14. The composite layered chip package according to claim 13, wherein the semiconductor chip in each of the layer portions and the additional semiconductor chip each include a plurality of memory cells.
 15. A method of manufacturing the composite layered chip package of claim 13, comprising the steps of: fabricating the main package; fabricating the additional portion; and stacking the main package and the additional portion on each other and electrically connecting the main package and the additional portion to each other. 